Solid-state imaging device, layout data generating device and layout data generating method

ABSTRACT

A solid-state imaging device includes pixels respectively having photoelectric conversion units and arranged in matrix in basic pattern units, and an optical member arranged on the incidence side of incident light than the pixels and having constituent elements respectively corresponding to the pixels. The pixels include first, second and third wavelength range light pixels. Each basic pattern is comprised of a combined arrangement pattern of the wavelength range light pixels. Misregistration constituent elements with the occurrence of misregistration exist in the constituent elements. The misregistration increases toward the misregistration constituent elements separated from a center position of a pixel array of the pixels. The misregistration of the misregistration constituent element for the first wavelength range light pixel and that of the misregistration constituent element for the third wavelength range light pixel are smaller and larger than that of the misregistration constituent element for the second wavelength range light pixel, respectively.

CROSS-REFERENCE TO RELATED APPLICATIONS

The disclosure of Japanese Patent Application No. 2013-231537 filed onNov. 7, 2013 including the specification, drawings and abstract isincorporated herein by reference in its entirety.

BACKGROUND

The present invention relates to a solid-state imaging device, a layoutdata generating device and a layout data generating method, and, forexample, to a solid-state imaging device including a plurality of pixelsand optical members, and a layout data generating device and method forgenerating layout data indicative of a layout arrangement of eachoptical member.

A technology related to a CCD line sensor equipped with a plurality ofphotodetecting units that read reflected light of an original documentfocused by an image forming lens has been described in JapaneseUnexamined Patent Application Publication No. 2005-229460 (PatentDocument 1). Specifically, there has been described in Patent Document1, a technology that adjusts an arrangement interval between thephotodetecting units with respect to a photodetecting position to beoriginally image-formed, based on the amount of misregistration of aphotodetecting position actually image-formed through an image forminglens.

There has been described in Japanese Unexamined Patent ApplicationPublication No. 2010-219453 (Patent Document 2), a technology that makesan interval between vertical CCD sections on both sides of a first pixelthat receives light in a long wavelength range, larger than an intervalbetween vertical CCD sections on both sides of a second pixel thatreceives light in a short wavelength range.

There has been described in Japanese Unexamined Patent ApplicationPublication No. 2010-232595 (Patent Document 3), a technology related toa unit pixel having a waveguide comprised of a columnar body constant incross-sectional area from its incoming end to its outgoing end, and amicrolens that guides incident light to the incoming end of thewaveguide. Specifically, in the unit pixel in Patent Document 3, thewaveguide is arranged in such a manner that the center of the flux ofthe incident light incident to the incident end surface of the waveguidefrom the microlens and the center axis of the waveguide coincide witheach other.

RELATED ART DOCUMENTS Patent Document

-   [Patent Document 1] Japanese Unexamined Patent Application    Publication No. 2005-229460-   [Patent Document 2] Japanese Unexamined Patent Application    Publication No. 2010-219453-   [Patent Document 3] Japanese Unexamined Patent Application    Publication No. 2010-232595

SUMMARY

For example, a solid-state imaging device typified by a CMOS imagesensor or a CCD sensor receives light condensed by an image forming lensand thereby captures an image corresponding to a subject. Thesolid-state imaging device has, for example, a plurality of pixelsarranged in a matrix form. Since light incident to a pixel disposed atthe center of an effective pixel region passes through the center of theimage forming lens, the light enters straight a photodetecting unit(photodiode) without refraction. On the other hand, in each pixelarranged in the outer periphery of the effective pixel region, theincident light is refracted and obliquely made incident to thephotodiode because it passes through the outer circumferential portionof the image forming lens.

Thus, in the pixels arranged in the outer periphery of the effectivepixel region, there is a risk of reducing the sensitivity of thesolid-state imaging device due to the shielding of incident lightdesired to be originally taken in the photodiode in a light shieldingzone arranged to prevent leakage of light into adjacent photodiodes orcell transistor regions, a boundary region between microlenses, aboundary region between color filters, etc. That is, there is room forimprovement in the solid-state imaging device in terms of improving itsphotosensitivity.

Other objects and novel features will become apparent from thedescription of the present specification and the accompanying drawings.

A solid-state imaging device in one embodiment includes firstconstituent elements of an optical member arranged corresponding to afirst pixel that receives long wavelength range light therein, andsecond constituent elements of the optical member arranged correspondingto a second pixel that receives short wavelength range light therein. Ineach of the first constituent elements, first misregistration occurswith respect to a photodetecting unit for the first pixel. In each ofthe second constituent elements, second misregistration occurs withrespect to a photodetecting unit for the second pixel. At this time, ina plurality of first pixels, a first misregistration amount increasestoward the first pixels arranged outside. In a plurality of secondpixels, a second misregistration amount increases toward the secondpixels arranged outside. Further, in the first and second pixelsincluded in the same basic patterns, the second misregistration amountbecomes larger than the first misregistration amount.

According to one embodiment, it is possible to improve thephotosensitivity of a solid-state imaging device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a typical diagram showing the manner in which light isconverted into an electric signal in an image sensor;

FIG. 2 is a diagram schematically illustrating a configuration when amicrolens is not provided in the image sensor;

FIG. 3 is a typical diagram depicting an example in which a microlens isarranged in front of each photodiode;

FIG. 4 is a diagram showing a primary color filter that is one of colorfilters;

FIG. 5 is a diagram illustrating a complementary color filter that isone of color filters;

FIG. 6 is a cross-sectional diagram showing an example of a devicestructure of a photodetecting unit in an embodiment 1;

FIG. 7 is a diagram typically illustrating the manner of light incidenton a plurality of pixels;

FIG. 8 is a typical diagram for describing the arrangement ofconstituent elements of each optical member included in an image sensorin a related art;

FIG. 9 is a typical diagram for describing the arrangement ofconstituent elements of each optical member included in an image sensorin the embodiment 1;

FIG. 10 is a typical diagram illustrating an example in which anadjustment corresponding to a misregistration constituent element isdone from initial layout data of a light shielding zone to form a maskin a mask maker;

FIG. 11 is a typical diagram showing a state in which drawingmisalignment due to electron beam drawing have occurred between aplurality of light shielding zone regions;

FIG. 12 is a typical diagram depicting an example of a mask in which alight shielding zone region corresponding to a pixel region is formed ofa metal pattern and light penetration units and a light shielding zoneregion corresponding to a peripheral circuit region is formed of a metalpattern;

FIG. 13 is a diagram showing a state in which a slit is formed;

FIG. 14 is a diagram illustrating an example of a hardware configurationof a layout data generating device in an embodiment 2;

FIG. 15 is a diagram showing a functional block diagram of the layoutdata generating device in the embodiment 2;

FIG. 16 is a typical diagram depicting a layout arrangement example inwhich constituent elements of an optical member are arranged in anodd-numbered array;

FIG. 17 is a table showing an example representing various data used ina layout data generating method in the embodiment 2;

FIG. 18 is a flowchart for describing the layout data generating methodin the embodiment 2;

FIG. 19 is a typical diagram showing a layout arrangement example inwhich constituent elements of an optical member are arranged in aneven-numbered array;

FIG. 20 is a flowchart for describing the layout data generating methodin the embodiment 2;

FIG. 21 is a part of a flowchart showing processing of an integeroperation unit in a modification 1;

FIG. 22 is a part of a flowchart showing processing of the integeroperation unit in a modification 2;

FIG. 23 is a diagram for describing processing of a shielding patterndata generating unit in a modification 3;

FIG. 24 is a diagram for describing processing of the shielding patterndata generating unit in the modification 3; and

FIG. 25 is a diagram for describing processing of the shielding patterndata generating unit in the modification 3.

DETAILED DESCRIPTION

The invention will be described by being divided into a plurality ofsections or embodiments whenever circumstances require it forconvenience in the following embodiments. However, unless otherwisespecified in particular, they are not irrelevant to one another. Onethereof has to do with modifications, details and supplementaryexplanations, etc. of some or all of the other.

When reference is made to the number of elements or the like (includingthe number of pieces, numerical values, quantity, range, etc.) in thefollowing embodiments, the number thereof is not limited to a specificnumber and may be greater than or less than or equal to the specificnumber unless otherwise specified in particular and definitely limitedto the specific number in principle.

It is further needless to say that constituent elements or components(including element steps, etc.) employed in the following embodimentsare not always essential unless otherwise specified in particular andconsidered to be definitely essential in principle.

Similarly, when reference is made to the shapes, positional relationsand the like of the components or the like in the following embodiments,they will include ones substantially analogous or similar to theirshapes or the like unless otherwise specified in particular andconsidered not to be definitely so in principle, etc. This is similarlyapplied even to the above-described numerical values and range.

The same reference numerals are respectively attached to the samemembers in principle in all the drawings for describing the embodiments,and a repeated description thereof will be omitted. Incidentally, evenplan diagrams may be hatched for clarity of illustration.

(Embodiment 1)<Schematic Configuration of Image Sensor (Solid-StateImaging Device)>

In the present embodiment 1, a description will be made of an imagesensor for imaging or obtaining an image with reference to theaccompanying drawings. A schematic configuration of the image sensorwill first be described. The image sensor is a device that convertslight inputted to the image sensor into an electric signal. FIG. 1 is atypical diagram showing the manner in which the light is converted intothe electric signal in the image sensor. For example, as shown in FIG.1, light emitted from an object is made incident on a lens L to form animage. The image sensor IS is disposed at an image forming position ofthe lens L. The image focused by the lens L is irradiated to the imagesensor IS. When light is irradiated to the image sensor IS, the imagesensor IS converts the light into an electric signal. Then the electricsignal outputted from the image sensor IS is signal-processed to therebygenerate an image. Thus, the image sensor IS has the function ofconverting the incident light into the electric signal and outputtingthe same.

Enlarging the photodetecting surface RC of the image sensor IS makes itunderstand that a microlens OL, a color filter CF and a photodiode PDhave been arranged in the photodetecting surface RC of the image sensorIS. That is, it is understood that the image sensor IS has the microlensOL, the color filter CF and the photodiode PD. The functions ofrespective constituent elements that configure the image sensor IS willhereinafter be sequentially described.

Configuration and Function of Microlens

A description will first be made about the microlens OL. FIG. 2 is adiagram schematically showing a configuration where no microlens OL isprovided in the image sensor IS. When the microlens OL is not providedin the image sensor IS as shown in FIG. 2, light incident on the imagesensor IS is irradiated not only to each photodiode PD disposed in thephotodetecting surface of the image sensor IS, but also a peripheralregion of the photodiode PD. That is, the photodiodes PDs are arrangedin an array form in the photodetecting surface of the image sensor IS,but the individual photodiodes PDs are arranged through a predeterminedgap therebetween. Accordingly, the light incident on the image sensor ISis not made incident on each photodiode PD all, but is irradiated evento the gap between the photodiodes PDs.

The light incident on the photodiode PD can be converted into anelectric signal, but the light incident to the gap between thephotodiodes PDs cannot be converted into the electric signal because thelight is not irradiated to the photodiode PD. That is, the lightincident to the gap between the adjacent photodiodes PDs becomeswasteful. Accordingly, the image sensor IS is preferably configured suchthat the light incident to the image sensor IS can be converted into theelectric signals as much as possible. It is however understood that whenno microlens OL is provided in the image sensor IS, the light wastedwithout being converted into the electric signals by the image sensor ISwill increase.

As a method for solving it, there is considered that the photodiodes PDsare arranged without any gap therebetween. Since it is however necessaryto provide a scanning circuit for transferring an electric chargeconverted by each individual photodiode PD, etc., gaps always existbetween the photodiodes PDs. For example, when the image sensor IS isformed by one large photodiode PD, the gap at its photodetecting surfacecan be eliminated, but the resolution of an image cannot be obtained inthis case. Therefore, in order to improve the resolution of the image,there is a need to arrange a plurality of small photodiodes PDsindependent of each other in the photodetecting surface as much aspossible. In this case, it is necessary to independently convertelectric charges from the respective photodiodes PDs into electricsignals. It is necessary to provide gaps (insulation regions)corresponding to predetermined intervals in such a manner that theindividual photodiodes PDs are electrically independent from each other.Accordingly, since the predetermined gap occurs between the individualphotodiodes PD, it is hard to completely eliminate the gap between thephotodiodes PDs.

Therefore, in order to efficiently convert the light incident to theimage sensor IS into the electric signal, the image sensor IS has beenprovided with microlenses OLs. FIG. 3 is a typical diagram showing anexample in which microlenses OLs are respectively arranged in front ofphotodiodes PDs. As shown in FIG. 3, the microlenses OLs arerespectively arranged in association with the photodiodes PDs. That is,the microlenses OLs are arranged by the same number as the number of thephotodiodes PDs. As shown in FIG. 3, light incident to the image sensorIS enters into each microlens OL. The light incident on each microlensOL is focused and irradiated onto the photodiode PD. Thus, the microlensOL has the function of causing the light incident to the image sensor ISto converge and applying the light onto the photodiode PD. That is, whenno microlens OL is provided, the light irradiated to the gap between thephotodiode PDs without being made incident onto the photodiode PDs isalso made incident to the photodiodes PD by refraction by providing themicrolenses OL. That is, the microlens OL has the function of causingthe incident light to converge and irradiating the light onto eachphotodiode PD. Thus, since the light incident to the gap between thephotodiodes PDs can be focused onto the photodiode PD by providing eachmicrolens OL in the image sensor IS, the light incident to the imagesensor IS can efficiently be converted into the electric signal.

Configuration and Function of Color Filter

The color filter CF will subsequently be described. Originally, thephotodiode PD to convert the light into the electric signal have nofunction of distinguishing between colors and can only distinguish thebrightness/darkness of the color. Accordingly, images photographed bythe image sensor are all made monochrome in the case of the merephotodiode PD. Therefore, the image sensor IS is provided with the colorfilter CF so as to be capable of generating a color image. The humaneyes also feel only the three primary colors of “red”, “green” and“blue”, but feel all colors by adjusting the quantity of light of thesethree primary colors. This is called “additive color mixture by threeprimary colors of light”. For example, if “red” and “green” are the samein light quantity, “yellow” is produced. That is, in a state in which“red” and “green” are identical in the quantity of light and thequantity of “blue” light is absent, a yellow color which is acomplementary color of “blue” is produced. Then, when the “red”, “green”and “blue” are made identical in light quantity, a white color isproduced. On the other hand, when all the quantities of “red”, “green”and “blue” lights are absent, a black color is produced. A color filterCF shown in FIG. 4 is illustrated as one using this principle. A primarycolor filter is shown in FIG. 4, which is one color filter CF. Theprimary color filter is a filter that uses the three primary colors ofRGB (Red, Green and Blue). By disposing the primary color filter infront of the photodiodes PDs, the photodiodes PDs corresponding to therespective colors can be provided. For example, a photodiode PD with ared filter placed in front thereof detects the quantity of light for thered color. A photodiode PD with a green filter placed in front thereofdetects the quantity of light for the green color. Further, a photodiodePD with a blue filter placed in front thereof detects the quantity oflight for the blue color. It is possible to realize various colorsaccording to the light quantity of the photodiode PD for the red color,the light quantity of the photodiode PD for the green color, and thelight quantity of the photodiode PD for the blue color.

Incidentally, the red filter, the green filter and the blue filter thatconfigure the color filter CF are arranged using as a unit, a basicpattern typified by a Bayer array shown in FIG. 4, for example withoutsimply arranging them. That is, the color filter CF is configured byrepeating the basic pattern in which the red, green and blue filters arecombined.

The primary color filter using the three primary colors of RGB is goodin color reproducibility in an image, but has a side effect that it isweak to the photography at a dark place where the sensitivity of theimage sensor IS is not so good. Therefore, the primary color filter isoften used in a large-sized image sensor IS good in sensitivity.

On the other hand, there is one called a “complementary color filter” inaddition to the primary color filter using the three primary colors ofRGB as the color filter CF. The complementary color filter is comprisedof four kinds of colors with Green (G) added to Cyan (C), Magenta (M)and Yellow (Y) as shown in FIG. 5, for example. An image sensor usingthe complementary color filter has however a problem in that CMYG isneeded to be converted to RGB in consideration of seeing each imageactually photographed by a human being, but noise occurs upon thisconversion. Since, however, the complementary color filter has anadvantage that it is good in sensitivity compared with the primary colorfilter, it is often used in an image sensor IS small in size (in otherwords, it can be said that the sensitivity is low).

Device Structure of Photodetecting Unit

A device structure of a photodetecting unit of the image sensor willsubsequently be described. FIG. 6 is a cross-sectional diagram showingan example of the device structure of the photodetecting unit. Forexample, a semiconductor substrate IS in which an n type impurity(donor) such as phosphorus (P), arsenic (As) or the like has beenintroduced is disposed in FIG. 6. An element isolation region LCS isformed in the surface (main surface, element forming surface) of thesemiconductor substrate IS. An active region is partitioned by theelement isolation region LCS, and the photodetecting unit is formed inthe partitioned active region. Specifically, a p type well PWL with a ptype impurity (acceptor) such as boron or the like introduced therein isformed in the semiconductor substrate IS. An n type well NWL with an ntype impurity such as phosphorus (P), arsenic (As) or the likeintroduced therein is formed so as to be included in the p type wellPWL. A photodiode (pn junction diode) is comprised of the p type wellPWL (p type semiconductor region) and the n type well NWL (n typesemiconductor region). Further, a p⁺type semiconductor region PR isformed in part of the surface of the n type well NWL. The p⁺typesemiconductor region PR is a region formed to suppress the generation ofelectrons based on interface levels formed in large numbers in thesurface of the semiconductor substrate IS. That is, the electrons aregenerated in the surface region of the semiconductor substrate IS due tothe influence of the interface levels even in a non-irradiated state oflight, thereby causing an increase in dark current. Therefore, thep⁺type semiconductor region PR with positive holes as majority carriersis formed in the surface of the n type well NWL with electrons asmajority carriers to thereby suppress the generation of the electrons inthe non-irradiated state of light and suppress the increase in the darkcurrent.

A gate insulating film is subsequently formed over the semiconductorsubstrate IS to overlap with part of the n type well NWL planarly. Agate electrode is formed over the gate insulating film. Then, sidewallsare formed over sidewalls on both sides of the gate electrode. Forexample, the gate insulating film is formed of a silicon oxide film, butnot limited to it. The gate insulating film may be formed of a highdielectric constant film higher in permittivity than the silicon oxidefilm. For example, the gate insulating film may be formed of ahafnium-based insulating film in which lantern oxide has been introducedin hafnium oxide. Further, the gate electrode can be formed of, forexample, a polysilicon film, and the sidewalls can be formed of, forexample, a silicon oxide film, a silicon nitride film, or a laminatedfilm of the silicon oxide film and the silicon nitride film.

Next, an n⁺type semiconductor region NR that serves as a drain region isformed within the semiconductor substrate IS provided in alignment withthe gate electrode. The n⁺type semiconductor region NR is formed of asemiconductor region with an n type impurity such as phosphorus (P),arsenic (As) or the like introduced therein.

The photodiode and transfer transistor Q are formed over thesemiconductor substrate IS in the above-described manner. Specifically,the photodiode is formed by the p type well PWL and the n type well NWL.Further, the transfer transistor Q is configured in such a manner thatthe above-described n type well NWL is taken as the source region andthe n⁺type semiconductor region NR formed in the semiconductor region ISspaced by a predetermined distance from the n type well NWL is taken asthe drain region. A region interposed between the source and drainregion serves as a channel forming region. The gate electrode is formedover the channel forming region through the gate insulating film. Thus,the transfer transistor Q is formed which has the source region, thedrain region, the channel forming region, the gate insulting film andthe gate electrode. It is understood that the photodiode and thetransfer transistor Q formed in the active region of the semiconductorsubstrate IS share the n type well NWL and are electrically coupled toeach other.

Incidentally, a silicide film can also be formed in the surface of thedrain region (n⁺type semiconductor region NR) of the transfer transistorQ. Thus, for example, the coupling resistance between the drain regionand a plug PLG can be reduced. Incidentally, the silicide film can beformed of, for example, a nickel platinum silicide film, a nickelsilicide film, a titanium silicide film, a cobalt silicide film or aplatinum silicide film, etc.

A wiring structure formed in an upper layer of each of the photodiodeand the transfer transistor Q formed over the semiconductor substrate ISwill subsequently be described with reference to FIG. 6. In FIG. 6, acap insulating film CAP is formed over the surface (the surfaces of then type well NWL and p⁺type semiconductor region PR) of the photodiode.The cap insulating film CAP has a function to hold the surfacecharacteristics (interface characteristics) of the semiconductorsubstrate IS satisfactorily and is formed of, for example, a siliconoxide film or a silicon nitride film. An antireflection film ARF isformed over the cap insulating film CAP and formed of, for example, asilicon oxynitride film.

Next, an interlayer insulating film IL1 is formed so as to cover thesemiconductor substrate IS including the gate electrode and the abovepart of the antireflection film ARF. The plug PLG is formed whichpenetrates through the interlayer insulating film IL1 and reaches then⁺type semiconductor region NR (drain region). The interlayer insulatingfilm IL1 is formed of, for example, a silicon oxide film with TEOS(tetra ethyl ortho silicate) as a raw material. The plug PLG is formedby filling, for example, a barrier conductor film formed of a titaniumfilm and a titanium nitride film (titanium film/titanium nitride film)formed over the titanium film, and a tungsten film formed over thebarrier conductor film in a contact hole formed in the interlayerinsulating film IL1.

Then, for example, an interlayer insulating film IL2 is formed over theinterlayer insulating film IL1 formed with the plug PLG. A wiring L1 isformed in the interlayer insulating film IL2. For example, theinterlayer insulating film IL2 is formed of, for example, a siliconoxide film, but not limited to it. The interlayer insulating film IL2can also be formed of a low dielectric constant film lower inpermittivity than the silicon oxide film. As the low dielectric constantfilm, there may be mentioned, for example, a SiOC film. The wiring L1 isformed of, for example, a copper wiring and can be formed by using thedamascene method. Incidentally, the wiring L1 is not limited to thecopper wiring, but can also be formed of an aluminum wiring.Subsequently, an interlayer insulating film IL3 comprised of, forexample, a silicon oxide film or a low dielectric constant film isformed over the interlayer insulating film IL2 formed with the wiringL1. A wiring L2 is formed in the interlayer insulating film IL3.Further, an interlayer insulating film IL4 is formed over the interlayerinsulating film IL3 formed with the wiring L2, and a light shieldingzone SZ is formed in the interlayer insulating film IL4.

Here, the wirings L1 and L2 and the light shielding zone SZ are formedso as not to overlap with the photodiode planarly. A light penetrationunit LPR is formed in a region that overlaps with the photodiodeplanarly. This is done to prevent the light incident to the photodiodefrom being shielded by the wirings L1 and L2 and the light shieldingzone SZ. A microlens OL is mounted over the light penetration unit LPRthrough a color filter CF. Incidentally, the light shielding zone SZ isprovided to separate the light incident to the photodiodes adjacent toeach other from each other. That is, the light shielding zone SZ has thefunction of suppressing the entrance of leakage light between theadjacent photodetecting units.

The photodetecting unit is configured in the above-described manner. Theoperation thereof will hereinafter be described in brief. When light ismade incident to the photodetecting unit in FIG. 6, the incident lightfirst passes through the microlens OL and the color filter CF.Thereafter, the incident light passes through the light penetration unitLPR partitioned by the light shielding zone SZ and further passesthrough the interlayer insulating films IL4 to IL1 transparent tovisible light, followed by entering the antireflection film ARF. Thereflection of the incident light is suppressed in the antireflectionfilm ARF, and hence the incident light having a sufficient quantity oflight enters the photodiode. Since the energy of the incident light islarger than the bandgap in silicon in the photodiode, the incident lightis absorbed by photoelectric conversion so that positive hole-electronpairs are generated. Electrons generated at this time are accumulated inthe n type well NWL. The transfer transistor Q is turned on with asuitable timing. Specifically, a voltage greater than or equal to athreshold voltage is applied to the gate electrode of the transfertransistor Q. Then, a channel region (n type semiconductor region) isformed in the channel forming region placed directly below the gateinsulating film. Thus, the source region (n type well NWL) of thetransfer transistor Q and the drain region (n⁺type semiconductor regionNR) thereof are electrically conducted to each other. As a result, theelectrons accumulated in the n type well NWL reach the drain regionthrough the channel region and are taken out from the drain region to anexternal circuit through a wiring layer. The photodetecting unit isoperated in this manner.

Configuration (Summary) of Image Sensor)

The image sensor configured in the above-described manner has aplurality of pixels respectively including photodiodes each functioningas a photoelectric conversion unit that converts incident light into anelectric charge. The pixels are arranged in a matrix form in basicpattern units. The image sensor has optical members each arranged on theincidence side of the incident light than the pixels. The optical memberhas constituent elements respectively corresponding to the pixels.

Specifically, the pixels include a first wavelength range light pixel,which makes first wavelength range light included in the incident lightenter therein, a second wavelength range light pixel, which is includedin the incident light and makes second wavelength range light shorter inwavelength than the first wavelength range light enter therein, and athird wavelength range light pixel, which makes third wavelength rangelight shorter in wavelength than the second wavelength range light entertherein. If explained in an easy way to understand, for example, the“first wavelength range light” is red light, the “second wavelengthrange light” is green light, and the “third wavelength range light” isblue right. Further, the “first wavelength range light pixel” is a redpixel, the “second wavelength range light pixel” is a green pixel, andthe “third wavelength range light pixel” is a blue pixel.

Each basic pattern that is a basic unit for a layout or arrangementpattern of plural pixels is comprised of an arrangement pattern in whichthe first wavelength range light pixel, the second wavelength rangelight pixel and the third wavelength range light pixel are combined. Asthe basic pattern, there maybe mentioned, for example, a Bayer array inwhich one red pixel, one blue pixel and two green pixels are combined.The basic pattern is not limited to the Bayer array, but may becomprised of various combination patterns each made up of a combinationof red, blue and green pixels.

As one example of the optical members, there may be mentioned, forexample, the light shielding zone SZ shown in FIG. 6. In this case, eachconstituent element corresponding to each of the pixels becomes thelight penetration unit LPR partitioned by the light shielding zone SZ.In other words, the constituent element corresponding to each of thepixels is a light penetration unit LPR comprised of an opening providedin the light shielding zone SZ.

Further, as another example thereof, there may be mentioned, forexample, the color filter CF shown in FIG. 1. In this case, of aplurality of constituent elements included in the optical member, theconstituent element corresponding to the first wavelength range lightpixel is a first wavelength range light penetration filter thattransmits the first wavelength range light, the constituent elementcorresponding to the second wavelength range light pixel is a secondwavelength range light penetration filter that transmits the secondwavelength range light, and the constituent element corresponding to thethird wavelength range light pixel is a third wavelength range lightpenetration filter that transmits the third wavelength range light. Inplain words, for example, of the constituent elements included in theoptical member, the constituent element corresponding to the red pixelis a red filter that transmits the red light, the constituent elementcorresponding to the green pixel is a green filter that transmits thegreen light, and the constituent element corresponding to the blue pixelis a blue filter that transmits the blue light.

Furthermore, as a further example thereof, there may be mentioned, forexample, a microlens group shown in FIG. 1. In this case, eachconstituent element corresponding to each of a plurality of pixels is amicrolens OL. As described above, the “optical member” described in thepresent specification is used as a concept including at least the lightshielding zone SZ, color filter CF and microlens group provided in theimage sensor.

Positional Relation Between Photoelectric Conversion Unit andConstituent Elements of Optical Member

As described above, the plural pixels that configure the pixel arrayexist in the image sensor. Each photodiode that functions as thephotoelectric conversion unit is formed in each of the pixels. Then,each constituent element of the optical member is arranged on theincidence side of the incident light to the photodiode with respect toeach of the pixels.

Here, the image sensor is configured in such a manner that as shown inFIG. 1 by way of example, an image formed by focusing the incident lightby the lens L that functions as an image forming lens is imaged orobtained by the image sensor IS. Accordingly, since the incident lightpasses through the lens L, the incidence direction of the incident lightincident to each pixel changes depending on the arrangement position ofeach pixel arranged in the photodetecting surface of the image sensorIS.

Specifically, FIG. 7 is a diagram typically showing the manner ofincident light incident onto a plurality of pixels. Of the pixels thatconfigure a pixel array, there are illustrated in FIG. 7, for example, apixel PXL1 arranged in the center with respect to the lens L, a pixelPXL2 arranged in a right peripheral portion with respect to the lens L,and a pixel PXL3 arranged in a left peripheral portion with respect tothe lens L.

Since the incident light passes through the central part of the lens Lin the pixel PXL1 in FIG. 7, the incident light linearly advanceswithout refraction by the lens L. As a result, the straight advancingincident light is made incident to the pixel PXL1. Thus, as shown inFIG. 7, the arrangement position of a photodiode PD1 formed in the pixelPXL1 and the arrangement position of a light penetration unit LPR1formed in a light shielding zone SZ1 are required to be aligned to makethe incident light incident to the photodiode PD1 efficiently.

On the other hand, in FIG. 7, since the incident light is refracted bythe lens L in the pixel PXL2 because the incident light passes throughthe peripheral portion of the lens L. As a result, the light refractedby the lens L is made incident to the pixel PXL2 from a diagonal oroblique direction. Therefore, in the pixel PXL2, the incident light madeincident from the diagonal direction is shielded by a light shieldingzone SZ2 when the arrangement position of a photodiode PD2 formed in thepixel PXL2 and the arrangement position of a light penetration unit LPR2formed in the light shielding zone SZ2 are aligned with each other.There is thus a fear that the quantity of the incident light madeincident to the pixel PXL2 is reduced so that photosensitivity isdeteriorated. From this point of view, as shown in FIG. 7, in order tomake the incident light incident to the photodiode PD2 efficiently, thearrangement position of the light penetration unit LPR2 formed in thelight shielding zone SZ2 is shifted to the center side of the pixelarray with respect to the arrangement position of the photodiode PD2formed in the pixel PXL2.

Similarly, in FIG. 7, since the incident light is refracted by the lensL in the pixel PXL3 because the incident light passes through theperipheral portion of the lens L. As a result, the light refracted bythe lens L is made incident to the pixel PXL3 from a diagonal direction.Therefore, in the pixel PXL3, the incident light made incident from thediagonal direction is shielded by a light shielding zone SZ3 when thearrangement position of a photodiode PD3 formed in the pixel PXL3 andthe arrangement position of a light penetration unit LPR3 formed in thelight shielding zone SZ3 are aligned with each other. There is thus afear that the quantity of the incident light made incident to the pixelPXL3 is reduced so that photosensitivity is deteriorated. From thispoint of view, as shown in FIG. 7, in order to make the incident lightincident to the photodiode PD3 efficiently, the arrangement position ofthe light penetration unit LPR3 formed in the light shielding zone SZ3is shifted to the center side of the pixel array with respect to thearrangement position of the photodiode PD3 formed in the pixel PXL3.

Thus, in the image sensor, the incident light is made obliquely incidentto the photodiode in each pixel arranged in the peripheral portion ofthe pixel array. Accordingly, in terms of making the incident lightincident to the photodiode efficiently, in the image sensor, thearrangement position of each light penetration unit formed in the lightshielding zone is shifted to the center side of the pixel array withrespect to the arrangement position of the photodiode formed in thepixel arranged in the peripheral portion of the pixel array.

The present embodiment has described the example in which the “lightshielding zone” has been taken up as the optical member, and the “lightpenetration unit” has been taken up as the constituent element of theoptical member, but not limited to it. Similarly, this can also be saidabout an optical member (each constituent element thereof) arranged onthe incidence side of the incident light to the photodiode. For example,the “red filter”, “green filter” and “blue filter” (constituent elementsof optical member) that configure the “color filter” being the opticalmember are preferably arranged with being shifted to the center side ofthe pixel array with respect to the arrangement position of thephotodiode formed in each pixel arranged in the peripheral portion ofthe pixel array in terms of making the incident light incident to thephotodiode efficiently. Further, for example, each of the “microlenses”(constituent elements of optical member) that configure the “microlensgroup” being the optical member is also preferably arranged with beingshifted to the center side of the pixel array with respect to thearrangement position of each photodiode formed in the pixel arranged inthe peripheral portion of the pixel array in terms of making theincident light incident to the photodiode efficiently.

In the way described above, in the image sensor, the arrangementposition of each constituent element of the optical member,corresponding to each pixel arranged in the peripheral portion of thepixel array in the pixels configuring the pixel array is arranged withbeing shifted to the center side of the pixel array with respect to thearrangement position of the photodiode. Thus, since it is possible tosuppress a reduction in the quantity of the incident light made incidentto the photodiode from the oblique direction even in each pixel arrangedin the peripheral portion of the pixel array, the photosensitivity ofthe image sensor can be improved.

Description of Related Art

A description will first be described below about a related art relatedto the image sensor. Thereafter, a description will be made about roomfor improvement that exists in the related art. A description willthereafter be made about a technical idea in the present embodiment 1 inwhich a contrivance has been applied to the room for improvementexisting in the related art.

FIG. 8 is a typical diagram for describing the arrangement ofconstituent elements of an optical member included in the image sensorin the related art. The arrangement positions of the constituentelements of the optical member, corresponding to a plurality of pixelsthat configure a pixel array are typically shown in FIG. 8.Specifically, it is assumed even in the related art that a plurality ofpixels configuring a pixel array are arranged in basic pattern unitseach comprised of a Bayer array. Even in the related art, since theconstituent elements of the optical member exist in association with thepixels respectively, the constituent elements of the optical member arearranged in association with the basic pattern with the pixels arrangedtherein. In FIG. 8, however, basic patterns BP1 through BP5 eachcomprised of a Bayer array are shown in a simplified simple array toclearly explain a technology related to the related art.

In FIG. 8, the constituent elements (which means constituent elements ofan optical member when hereinafter simply called components orconstituent elements) of the optical member, which are included in eachof the five basic patterns BP1 through BP5, are illustrated in FIG. 8.Specifically, the basic pattern BP1 indicates a basic pattern located inthe center of the pixel array. A constituent element CER1 correspondingto a red pixel, a constituent element CEG1 corresponding to a greenpixel, and a constituent element CEB1 corresponding to a blue pixel areincluded within the basic pattern BP1.

Also in FIG. 8, the basic pattern BP2 indicates a basic pattern locatedat a place separated by a distance a to the right side from the centerof the pixel array. A constituent element CER2 corresponding to the redpixel, a constituent element CEG2 corresponding to the green pixel, anda constituent element CEB2 corresponding to the blue pixel are includedwithin the basic pattern BP2.

Further, in FIG. 8, the basic pattern BP3 indicates a basic patternlocated at a place separated by a distance b (b>a) to the right sidefrom the center of the pixel array. A constituent element CER3corresponding to the red pixel, a constituent element CEG3 correspondingto the green pixel, and a constituent element CEB3 corresponding to theblue pixel are included within the basic pattern BP3.

On the other hand, in FIG. 8, the basic pattern BP4 indicates a basicpattern located at a place separated by the distance a to the left sidefrom the center of the pixel array. A constituent element CER4corresponding to the red pixel, a constituent element CEG4 correspondingto the green pixel, and a constituent element CEB4 corresponding to theblue pixel are included within the basic pattern BP4.

Further, in FIG. 8, the basic pattern BP5 indicates a basic patternlocated at a place separated by the distance b (b>a) to the left sidefrom the center of the pixel array. A constituent element CER5corresponding to the red pixel, a constituent element CEG5 correspondingto the green pixel, and a constituent element CEB5 corresponding to theblue pixel are included within the basic pattern BP5.

Here, in the related art, the arrangement position of each constitutingelement of the optical member, corresponding to each pixel arranged inthe peripheral portion of the pixel array, of the pixels that configurethe pixel array is arranged with being shifted to the center side of thepixel array with respect to the arrangement position of the photodiode.

Specifically, in the related art, in the basic patterns BP2 and BP4 asshown in FIG. 8, the constituent elements CER2, CEG2 and CEB2 and theconstituent elements CER4, CEG4 and CEB4 are respectively arranged withbeing shifted to the center side of the pixel array by a misregistrationamount indicated by “a (1-S)” with respect to the distance a being thearrangement distance from the center of the pixel array. At this time,“S” is a constant value indicative of a shrink rate. Incidentally, inthe present specification, the constituent elements in each of whichmisregistration occurs may be called misregistration constituentelements. Thus, for example, the constituent elements CER2, CEG2 andCEB2 and the constituent elements CER4, CEG4 and CEB4 can be calledmisregistration constituent elements.

Similarly, in the related art, in the basic patterns BP3 and BP5 asshown in FIG. 8, the constituent elements CER3, CEG3 and CEB3 and theconstituent elements CER5, CEG5 and CEB5 are respectively arranged withbeing shifted to the center side of the pixel array by a misregistrationamount indicated by “b (1-S)” with respect to the distance b being thearrangement distance from the center of the pixel array. Even in thiscase, for example, the constituent elements CER3, CEG3 and CEB3 and theconstituent elements CER5, CEG5 and CEB5 become misregistrationconstituent elements.

Thus, in the related art, the misregistration constituent elements ineach of which misregistration occurs with respect to each photodiodethat functions as the photoelectric conversion unit exist in theconstituent elements that configure the optical member. In themisregistration constituent elements as shown in FIG. 8, themisregistration amount increases toward the misregistration constituentelements away from the center position of the pixel array.

According to the image sensor in the related art configured in this way,a reduction in the quantity of the incident light made incident to thephotodiode from the oblique direction can be suppressed even at eachpixel arranged in the peripheral portion of the pixel array, and hencethe photosensitivity of the image sensor can be improved. In particular,as each pixel is subjected to being arranged in the peripheral portionof the pixel array, the incident light is made incident to thephotodiode from the oblique direction (direction in which it approachesthe horizontal direction) at large angle of incidence. For this reason,as in the related art, it is considered that the reduction in thequantity of the incident light made incident to the photodiode from theoblique direction can effectively be suppressed by increasing the amountof misregistration toward each of the misregistration constituentelements away from the center position of the pixel array.

Incidentally, the “incident angle” is defined as an incident angle ofincident light measured from the normal line erected on the surface ofeach pixel. For example, when incident light is made incident from thedirection orthogonal to a pixel, the “incident angle” becomes 0 degrees.

Room for Improvement Existing in the Related Art

As a result of examining the above-described related art by the presentinventors, it became clear that room for improvement to be shown belowexisted in the related art. This room for improvement will be described.

For example, as shown in FIG. 7, the incident light from a subjectenters the lens L that functions as the image forming lens, but theincident light made incident to the peripheral portion of the lens L isrefracted by the lens L. Since, at this time, the incident lightincludes light of various wavelengths, and wavelength dependence existsin the index of refraction, the magnitude of refraction varies dependingon the light different in wavelength. That is, a chromatic aberrationoccurs in the incident light made incident to the lens L. Specifically,since the refraction index becomes large as the wavelength becomesshort, for example, the magnitude of the refraction index of blue lightshort in wavelength becomes larger than the magnitude of the refractionindex of red light long in wavelength.

Here, in the above-described related art, the configuration shown belowhas been adopted in each pixel arranged in the peripheral portion of thepixel array in terms of making the incident light incident to eachphotodiode efficiently, taking into consideration that the incidentlight is made incident to the photodiode from the oblique direction.That is, in the related art, as shown in FIG. 8, the arrangementposition of each constituent element of the optical member,corresponding to each pixel arranged in the peripheral portion of thepixel array, of the pixels that configure the pixel array is arrangedwith being shifted to the center side of the pixel array with respect tothe arrangement position of the photodiode.

When the reference is however made to the basic pattern BP2, forexample, the amount of misregistration of the constituent element CER2corresponding to the red pixel, the amount of misregistration of theconstituent element CEG2 corresponding to the green pixel, and theamount of misregistration of the constituent element CEB2 correspondingto the blue pixel become the same amount of misregistration in therelated art. That is, in the related art, for example, the amount ofmisregistration of each constituent element is determined withoutconsidering the chromatic aberration that the magnitude of refraction ofthe blue light short in wavelength becomes larger than that ofrefraction of the red light long in wavelength.

For this reason, it becomes difficult for the related art to obtain themaximum sensitivity by causing the incident light to enter efficientlyin the red, green and blue pixels even if the constituent elements ofthe optical member are arranged with being shifted with respect to thephotodiode formed in each pixel. Described specifically, in the relatedart, the arrangement position of each constituent element is shiftedwith the amount of misregistration common to each of the red, green andblue pixels included within the same basic pattern. Therefore, forexample, even if the above common amount of misregistration is set suchthat the maximum sensitivity is obtained with respect to the red pixel,it is not possible for the green and blue pixels to cause the incidentlight to enter efficiently because of the chromatic aberration that themagnitude of refraction varies with respect to light different inwavelength. As a result, it is not possible to obtain the maximumsensitivity with respect to the green and blue pixels. That is, since nochromatic aberration is taken into consideration in the related art, itbecomes difficult to obtain the maximum sensitivity in the red, greenand blue pixels simultaneously. In other words, in the related art,there exists room for improvement for the red, green and blue pixels interms of obtaining the maximum sensitivity simultaneously.

Feature of Embodiment 1

Thus, in the present embodiment 1, contrivances are done with respect tothe room for improvement that exists in the above-described related art.A description will be made about the technical idea in the presentembodiment 1 in which the contrivances are done.

FIG. 9 is a typical diagram for describing the arrangement of theconstituent elements of each optical member included in the image sensorin the present embodiment 1. There are typically shown in FIG. 9 thepositions of arrangement of the constituent elements of the opticalmembers corresponding to a plurality of pixels that configure a pixelarray. Specifically, even in the present embodiment 1, a plurality ofpixels that configure a pixel array are assumed to be arranged in basicpattern units each comprised of a Bayer array. Further, even in thepresent embodiment 1, since the constituent elements of the opticalmembers exist in association with the pixels respectively, theconstituent elements of the optical members are arranged in associationwith the basic patterns with the pixels arranged therein. In FIG. 9,however, basis patterns BP1 through BP5 each comprised of a Bayer arrayare shown in a simplified simple array to clearly explain the technicalidea in the present embodiment 1.

The constituent elements of the optical member, which are included ineach of the five basic patterns BP1 to BP5, are illustrated in FIG. 9.Specifically, the basic pattern BP1 indicates a basic pattern located inthe center of the pixel array. A constituent element CER1 correspondingto a red pixel, a constituent element CEG1 corresponding to a greenpixel, and a constituent element CEB1 corresponding to a blue pixel areincluded within the basic pattern BP1.

Also in FIG. 9, the basic pattern BP2 indicates a basic pattern locatedat a place separated by a distance a to the right side from the centerof the pixel array. A constituent element CER2 corresponding to the redpixel, a constituent element CEG2 corresponding to the green pixel, anda constituent element CEB2 corresponding to the blue pixel are includedwithin the basic pattern BP2.

Further, in FIG. 9, the basic pattern BP3 indicates a basic patternlocated at a place separated by a distance b (b>a) to the right sidefrom the center of the pixel array. A constituent element CER3corresponding to the red pixel, a constituent element CEG3 correspondingto the green pixel, and a constituent element CEB3 corresponding to theblue pixel are included within the basic pattern BP3.

On the other hand, in FIG. 9, the basic pattern BP4 indicates a basicpattern located at a place separated by the distance a to the left sidefrom the center of the pixel array. A constituent element CER4corresponding to the red pixel, a constituent element CEG4 correspondingto the green pixel, and a constituent element CEB4 corresponding to theblue pixel are included within the basic pattern BP4.

Further, in FIG. 9, the basic pattern BP5 indicates a basic patternlocated at a place separated by the distance b (b>a) to the left sidefrom the center of the pixel array. A constituent element CER5corresponding to the red pixel, a constituent element CEG5 correspondingto the green pixel, and a constituent element CEB5 corresponding to theblue pixel are included within the basic pattern BP5.

Here, in the present embodiment 1, the arrangement position of eachconstituting element of the optical member, corresponding to each pixelarranged in the peripheral portion of the pixel array, of the pixelsthat configure the pixel array is arranged with being shifted to thecenter side of the pixel array with respect to the arrangement positionof the photodiode.

Specifically, in the present embodiment 1, in the basic patterns BP2 andBP4 as shown in FIG. 9, the constituent elements CER2 and CER4 arerespectively arranged with being shifted to the center side of the pixelarray by a misregistration amount indicated by “a (1-Sr)” with respectto the distance a being the arrangement distance from the center of thepixel array. Also, in the present embodiment 1, in the basic patternsBP2 and BP4, the constituent elements CEG2 and CEG4 are respectivelyarranged with being shifted to the center side of the pixel array by amisregistration amount indicated by “a (1-Sg)” with respect to thedistance a being the arrangement distance from the center of the pixelarray. Further, in the present embodiment 1, in the basic patterns BP2and BP4, the constituent elements CEB2 and CEB4 are respectivelyarranged with being shifted to the center side of the pixel array by amisregistration amount indicated by “a (1-Sb)” with respect to thedistance a being the arrangement distance from the center of the pixelarray. At this time, “Sr” indicates a shrink rate of the constituentelement corresponding to the red pixel, “Sg” indicates a shrink rate ofthe constituent element corresponding to the green pixel, and “Sb”indicates a shrink rate of the constituent element corresponding to theblue pixel. Further, “Sr”, “Sg” and “Sb” are different in value. “Sr” islarger in value than “Sg”, and “Sb” is smaller in value than “Sg”(Sr>Sg>Sb).

Similarly, in the present embodiment 1, in the basic patterns BP3 andBP5 as shown in FIG. 9, the constituent elements CER3 and CER5 arerespectively arranged with being shifted to the center side of the pixelarray by a misregistration amount indicated by “b (1-Sr)” with respectto a distance b (b>a) being an arrangement distance from the center ofthe pixel array. Also, in the present embodiment 1, the constituentelements CEG3 and CEG5 are respectively arranged with being shifted tothe center side of the pixel array by a misregistration amount indicatedby “b (1-Sg)” with respect to the distance b being the arrangementdistance from the center of the pixel array. Further, in the presentembodiment 1, in the basic patterns BP3 and BP5, the constituentelements CEB3 and CEB5 are respectively arranged with being shifted tothe center side of the pixel array by a misregistration amount indicatedby “b (1-Sb)” with respect to the distance b being the arrangementdistance from the center of the pixel array.

Thus, even in the present embodiment 1, the misregistration constituentelements in each of which misregistration occurs with respect to eachphotodiode that functions as the photoelectric conversion unit exist inthe constituent elements that configure each optical member. In themisregistration constituent elements as shown in FIG. 9, themisregistration amount increases toward the misregistration constituentelements away from the center position of the pixel array. Thus,according to the image sensor in the present embodiment 1, a reductionin the quantity of the incident light made incident to the photodiodefrom the oblique direction can be suppressed even at each pixel arrangedin the peripheral portion of the pixel array. Therefore, according tothe present embodiment 1, the photosensitivity of the image sensor canbe improved.

In particular, as each pixel is subjected to being arranged in theperipheral portion of the pixel array, the incident light is madeincident to the photodiode from the oblique direction (direction inwhich it approaches the horizontal direction) at a large angle ofincidence. For this reason, as in the present embodiment 1, thereduction in the quantity of the incident light made incident to thephotodiode from the oblique direction can effectively be suppressed byincreasing the amount of misregistration toward each of themisregistration constituent elements away from the center position ofthe pixel array.

Further, a feature point peculiar to the present embodiment 1 resides inthe configuration in each arbitrary basic pattern comprised of thepixels corresponding to the misregistration constituent elements asshown in FIG. 9, for example. That is, the feature point peculiar to thepresent embodiment 1 resides in that the amount of misregistration ofeach misregistration constituent element corresponding to the firstwavelength range light pixel is smaller than the amount ofmisregistration of each misregistration constituent elementcorresponding to the second wavelength range light pixel, and the amountof misregistration of each misregistration constituent elementcorresponding to the third wavelength range light pixel is larger thanthe amount of misregistration of each misregistration constituentelement corresponding to the second wavelength range light pixel.

If explained in an easy way to understand, the feature of the presentembodiment 1 resides in that in the basic pattern BP2 of FIG. 9, forexample, the amount of misregistration of the constituent element CER2corresponding to the red pixel is smaller than the amount ofmisregistration of the constituent element CEG2 corresponding to thegreen pixel, and the amount of misregistration of the constituentelement CEB2 corresponding to the blue pixel is larger than the amountof misregistration of the constituent element CEG2 corresponding to thegreen pixel. That is, in the present embodiment 1, for example, themisregistration amounts of the constituent elements CER2, CEG2 and CEB2are determined in consideration of a chromatic aberration of incidentlight in the constituent elements CER2, CEG2 and CEB2 included in thesame basic pattern BP2.

Specifically, in the present embodiment 1, in association with thechromatic aberrations that the magnitude of refraction of the red lightis larger than that of refraction of the green light, and the magnitudeof refraction of the blue light is larger than that of refraction of thegreen light, the amount of misregistration of the constituent elementCER2 is smaller than the amount of misregistration of the constituentelement CEG2, and the amount of misregistration of the constituentelement CEB2 is larger than the amount of misregistration of theconstituent element CEG2. Thus, according to the present embodiment 1,even when the chromatic aberrations exist, the misregistration amountsof the constituent elements corresponding to the respective red, greenand blue pixels existing in the same basic pattern are optimized inconsideration of the chromatic aberrations. Therefore, according to thepresent embodiment 1, the maximum sensitivity can be obtained at thered, green and blue pixels simultaneously, whereby the photosensitivityof the image sensor in the present embodiment 1 can be improved.

Thus, in the technical idea in the present embodiment 1, themisregistration amounts of the constituent elements of the opticalmember, which respectively correspond to the red, green and blue pixelsexisting in the same basic pattern, are made different in correspondencewith the chromatic aberration that the magnitude of refraction variesdepending on the wavelength. That is, the optimum values of themisregistration amounts of the constituent elements of the opticalmember, which respectively correspond to the red, green and blue pixels,differ according to the chromatic aberration. Therefore, themisregistration amounts of the constituent elements of the opticalmember, which respectively correspond to the red, green and blue pixels,are determined in consideration of this point. The feature point of thetechnical idea in the present embodiment 1 resides in it. According tothe present embodiment 1, a reduction in the quantity of light incidentto each of the red, green and blue pixels can be suppressed by thefeature point, so that it is possible to enhance sensitivity at the red,green and blue pixels simultaneously.

Embodiment 2

The present embodiment 2 will describe a technical idea to generatelayout data for realizing the layout arrangement of each constituentelement described in the embodiment 1.

First, the need for a layout data generating device that generates thelayout data of the constituent elements described in the embodiment 1will be described in the present embodiment 2.

Need for Layout Data Generating Device

A photolithography technology using a mask is used in, for example,constituent elements of an optical member typified by a light shieldingzone, a color filter or a microlens group. Accordingly, a mask is neededto form the constituent elements of each optical member. Layout dataindicative of the position of arrangement of each constituent element ofthe optical member is required to form the mask.

Here, layout data indicative of respective initial arrangement positionsof a plurality of constituent elements arranged in the same positions asthose of a plurality of photoelectric conversion units (photodiodes) inplan view are defined as initial layout data. Further, layout data towhich adjustments corresponding to misregistration constituent elementshave been reflected are defined as corrected layout data.

For example, when the misregistration constituent elements are notincluded in a plurality of constituent elements, the mask is formed byusing the initial layout data. In this case, the initial layout data ofthe constituent elements are presented from a device maker to a maskmaker, so that the mask maker forms a mask on the basis of the presentedinitial layout data. Then, in the device maker, the constituent elementsof each optical member are formed by using the mask produced based onthe initial layout data.

When reference is made to the above related art in this regard, themisregistration constituent elements exist even in the related art.There is therefore a need to perform adjustments corresponding to themisregistration constituent elements from the initial layout data withrespect to the layout data used in the related art. The device makerdoes not however generate corrected layout data with adjustmentscorresponding to the misregistration constituent elements beingreflected thereto. Even in this case, the current state is that theinitial layout data of each constituent element has been presented fromthe device maker to the mask maker. In this case, an adjustmentinstruction from the device maker is transferred to the mask maker,whereby the mask maker performs adjustments corresponding to themisregistration constituent elements from the initial layout data tomanufacture a mask.

A description will be made below by taking up a light shielding zone asan optical member. FIG. 10 is a typical diagram illustrating an examplein which an adjustment corresponding to each misregistration constituentelement is done from initial layout data of a light shielding zone toform a mask MSK1 in the mask maker. As shown in FIG. 10, a lightshielding zone region SZR1 and a light shielding zone region SZR2 areformed in the mask MSK1. For example, the light shielding zone regionSZR1 is a light shielding zone region corresponding to a pixel region inwhich a plurality of pixels are formed, and the light shielding zoneregion SZR2 is a light shielding zone region corresponding to aperipheral circuit region in which a peripheral circuit such as a logiccircuit, an AD conversion circuit or the like is formed.

In the related art, as an example in which the adjustment correspondingto each misregistration constituent element is done from the initiallayout data of the light shielding zone, an adjustment to shrink thelight shielding zone region SZR1 is carried out by the mask maker asshown in FIG. 10, for example. In this case, the mask maker performselectron beam drawing with division into the light shielding zone regionSZR1 corresponding to the pixel region and the light shielding zoneregion SZR2 corresponding to the peripheral circuit region to therebymanufacture the mask MSK1. There is therefore a possibility that in themask MSK1, a drawing misalignment due to the electron beam drawing willoccur between the light shielding zone region SZR1 and the lightshielding zone region SZR2.

FIG. 11 is a typical diagram showing a state in which a drawingmisregistration due to electron beam drawing has occurred between thelight shielding zone regions SZR1 and SZR2. It is understood that inFIG. 11, a light shielding zone region SZR1 (C) originally indicates aregion in which the light shielding zone region SZR1 is formed, but infact, as shown in FIG. 11, the light shielding zone region SZR1 isformed shifted from the light shielding zone region SZR1 (C) by thedrawing misalignment due to the electron beam drawing. In this case, theadjustment to shrink the light shielding zone region SZR1 is notsufficiently reflected to the mask MSK1.

Further, FIG. 12 is a typical diagram showing an example of a mask MSK2in which a light shielding zone region SZR1 corresponding to a pixelregion is formed of a metal pattern MP and light penetration units LPR,and a light shielding zone region SZR2 corresponding to a peripheralcircuit region is formed of a metal pattern MP. In FIG. 12, a boundaryline BL is shown between the light shielding zone region SZR1 and thelight shielding zone region SZR2. Consider where an adjustment to shrinkthe light shielding zone region SZR1 existing inside the boundary lineBL by the mask maker is done with the boundary line BL as a boundary. Inthis case, since only the light shielding zone region SZR1 is shrunkenas shown in FIG. 13, a slit SL unformed with the metal pattern MP isformed between the light shielding zone region SZR1 and the lightshielding zone region SZR2. Accordingly, when the adjustment to shrinkthe light shielding zone region SZR1 is done by the mask maker, it isnecessary to carryout special processing for filling the slit SLunformed with the metal pattern MP.

From the above, it is considered that in the related art in which themisregistration constituent elements exist, the mask maker performs theadjustment to shrink the light shielding zone region SZR1, but in thiscase, there exists room for improvement shown below. That is, when theadjustment to shrink the light shielding zone region SZR1 is done by themask maker, there is a need to perform electron beam drawing orlithography on the light shielding zone region SZR1 and the lightshielding zone region SZR2 separately to form the mask as shown in FIGS.10 and 11. As a result, there is a possibility that a drawingmisalignment will occurs between the light shielding zone region SZR1and the light shielding zone region SZR2. There is thus a fear that anadvantage due to the shrinkage of the light shielding zone region SZR1is not obtained. It is considered that in the present embodiment 1 inparticular, since the layout arrangement of the misregistrationconstituent elements in consideration of even the chromatic aberrationis further adopted, it becomes more complex than the layout arrangementof the misregistration constituent elements in the related art, and theinfluence of the drawing misalignment that occurs between the lightshielding zone region SZR1 and the light shielding zone region SZR2increases. Further, when the adjustment to shrink the light shieldingzone region SZR1 is done by the mask maker, the process of manufacturingthe mask by the mask maker is considered to be complicated because thereis a need to carry out the special processing for filling the slit SLformed between the light shielding zone region SZR1 and the lightshielding zone region SZR2 as shown in FIG. 13.

When the adjustment corresponding to each misregistration constituentelement is done from the initial layout data to form the mask in themask maker, it is necessary to transmit an adjustment instruction givenfrom the device maker to the mask maker. Since, however, the layoutarrangement of the misregistration constituent elements havingconsidered even the chromatic aberration is further adopted in the imagesensor according to the embodiment 1, it is more complicated than thelayout arrangement of the misregistration constituent elements in therelated art, so that there is a fear about the complication of theadjustment instruction from the device maker to the mask maker. Further,since the manufacturing process of the mask by the mask maker is morecompleted than the manufacturing process in the related art in themanufacturing process of the image sensor according to the embodiment 1,there is also a fear that the cost of the mask will rise.

Thus, it is considered to be useful to generate by the device maker,corrected layout data to which the adjustment corresponding to eachmisregistration constituent element is reflected and provide thecorrected layout data to the mask maker without manufacturing by themask maker, the mask by performing the adjustments corresponding to themisregistration constituent elements from the initial layout data. Thisis because since the mask maker can manufacture the mask by one electronbeam drawing, based on the corrected layout data generated by the devicemaker where the corrected layout data is presented to the mask maker,drawing misalignment due to plural times of electron beam drawing doesnot occur. Further, since the instruction from the device maker to themask maker is also simplified, and the manufacturing process of the maskin the mask maker is also simplified, the manufacturing cost of the maskcan be reduced. This means leading of reducing the manufacturing cost ofan image sensor manufactured by the device maker.

It is thus understood that the provision of the layout data generatingdevice by the device maker, which generates the corrected layout data towhich the adjustments corresponding to the misregistration constituentelements in the embodiment 1 have been reflected realizes highperformance and high reliability and is important in terms ofmanufacturing an image sensor capable of achieving even a costreduction. Therefore, the present embodiment 2 will particularlydescribe the layout data generating device that generates the layoutdata for realizing the layout arrangement of the constituent elements inthe embodiment 1.

Hardware Configuration of Layout Data Generating Device

A description will first be made below about the hardware configurationof the layout data generating device in the present embodiment 2. FIG.14 is a diagram showing an example of the hardware configuration of thelayout data generating device LDA in the present embodiment 2.Incidentally, the configuration shown in FIG. 14 shows only an exampleof the hardware configuration of the layout data generating device LDA.The hardware configuration of the layout data generating device LDA isnot limited to the configuration described in FIG. 14, but may beanother configuration.

In FIG. 14, the layout data generating device LDA in the presentembodiment 2 is equipped with a CPU (Central Processing Unit) 1 thatexecutes a program. The CPU 1 is electrically coupled to, for example, aROM (Read Only Memory) 2, a RAM (Random Access Memory) 3 and a hard diskdevice 12 through a bus 13 and configured to control these hardwaredevices.

The CPU 1 is coupled even to an input device and an output devicethrough the bus 13. As one example of the input device, there may bementioned a keyboard 5, a mouse 6, a communication board 7 and a scanner11, etc. On the other hand, as one example of the output device, theremay be mentioned a display 4, the communication board 7 and a printer10, etc. Further, the CPU 1 may be coupled to, for example, a removabledisk device 8 and a CD/DVD-ROM device 9.

The layout data generating device LDA may be coupled to, for example, anetwork. For example, when the layout data generating device LDA iscoupled to another external device through the network, thecommunication board 7 that configures part of the layout data generatingdevice LDA is coupled to a LAN (Local Area Network), a WAN (Wide AreaNetwork) or Internet.

The RAM 3 is an example of a volatile memory. Each of recording mediasuch as the ROM 2, the removable disk device 8, the CD/DVD-ROM device 9and the hard disk device 12, is an example of a non-volatile memory. Astorage device of the layout data generating device LDA is configured bythese volatile and non-volatile memories.

For example, an operating system (OS) 121, a program group 122 and afile group 123 are stored in the hard disk device 12. The CPU 1 executesa program contained in the program group 122 while utilizing theoperating system 121. Further, a program of the operating system 121executed by the CPU 1, and at least part of an application program aretemporarily stored in the RAM 3, and various data necessary forprocessing by the CPU 1 are stored in the RAM 3.

A BIOS (Basic Input Output System) program is stored in the ROM 2, and aboot program is stored in the hard disk device 12. When the layout datagenerating device LDA is started, the BIOS program stored in the ROM 2and the boot program stored in the hard disk device 12 are executed andthereby the operating system 121 is started by the BIOS program and theboot program.

A program for realizing the function of the layout data generatingdevice LDA is stored in the program group 122. This program is read andexecuted by the CPU 1. Further, information, data, signal values,variable values and parameters indicative of results of processing bythe CPU 1 are stored in the first group 123 as respective items of afile.

The file is stored in the recording medium such as the hard disk device12, the memory or the like. The information, data, signal values,variable values and parameters stored in the recording medium such asthe hard disk device 12, the memory or the like are read into a mainmemory or a cache memory by the CPU 1 and used for the operation of theCPU 1 typified byextraction/retrieval/reference/comparison/computation/processing/edition/output/priting/display.For example, during the above operation of the CPU 1, the information,data, signal values, variable values and parameters are temporallystored in the main memory, register, cache memory, buffer memory, etc.

The function of the layout data generating device LDA maybe realized byfirmware stored in the ROM 2. Alternatively, it maybe realized by onlysoftware, only hardware typified by element/device/substrate/wiring, acombination of software and hardware, and a combination thereof withfirmware. The firmware and the software are stored in a recording mediumtypified by the hard disk device 12, removable disk, CD-ROM, DVD-ROM orthe like as programs. Each program is read and executed by the CPU 1.That is, the program causes a computer to function as the layout datagenerating device LDA.

Thus, the layout data generating device LDA in the present embodiment 2is a computer equipped with the CPU 1 that serves as the processingdevice, the hard disk device 12 and the memory each of which servers asthe storage device, the keyboard, mouse and communication board each ofwhich serves as the input device, and the display, printer andcommunication board each of which serves as the output device. Eachfunction of the layout data generating device LDA is realized using theabove-described processing device, storage device, input device andoutput device.

Functional Configuration of Layout Data Generating Device

The functional configuration of the layout data generating device LDA inthe present embodiment 2 will subsequently be described. The layout datagenerating device LDA in the present embodiment 2 is a device thatgenerates the layout data indicative of the layout arrangement of theconstituent elements of the image sensor described in the embodiment 1.The configuration of the image sensor according to the embodiment 1 ispremised.

That is, the image sensor according to the embodiment 1 is equipped witha plurality of pixels which respectively have photoelectric conversionunits (photodiodes) that convert incident light into electrical chargesand are arranged in a matrix form in units of basic patterns, andoptical members each arranged on the incidence side of the incidentlight than the pixels and having constituent elements respectivelycorresponding to the pixels. At this time, for example, a red pixel, agreen pixel and a blue pixel are contained in the pixels. The basicpattern is comprised of a layout pattern in which the red, green andblue pixels are combined, as typified by a Bayer array, for example. Thedevice that generates the layout data indicative of the arrangementpositions of the constituent elements configuring each optical member ofthe image sensor according to the embodiment 1 configured in this way isthe layout data generating device according to the embodiment 2. As theoptical member, there may be mentioned, for example, a “light shieldingzone”. As the constituent element of the optical member, there may bementioned a “light penetration unit”. The optical member and theconstituent element are not however limited to them. As the opticalmember, there may be mentioned a “color filter”. As the constituentelement, there may also be mentioned a “red filter”, a “green filter”,and a “blue filter”. Further, as the optical member, there may bementioned a “microlens group”, and as the constituent element, there mayalso be mentioned a “microlens”.

FIG. 15 is a diagram showing a functional block diagram of the layoutdata generating device LDA in the present embodiment 2. In FIG. 15, thelayout data generating device LDA in the present embodiment 2 has aninput unit IU, a shrink layout data operation unit SLDU, a divisionoperation unit DOU, an integer operation unit IOU, a corrected layoutdata operation unit CLDU, an output unit OU and a data memory unit DMU.

The input unit IU is configured to be inputted with initial layout dataindicative of respective initial arrangement positions of a plurality ofconstituent elements arranged planarly in the same positions as thoseof, for example, a plurality of photoelectric conversion units(photodiodes), and shrink rate data indicative of rates at whichrespective arrangement positions of a plurality of constituent elementsare shrunken. Further, the input unit IU is configured to be inputtedwith pitch data indicative of pitches at which the pixels are arranged,origin coordinate data indicative of origin coordinates of a pixelarray, grid data indicative of a digitized unit, etc.

The initial layout data, shrink rate data, pitch data, origin coordinatedata, grid data, etc. inputted from the input unit IU to the layout datagenerating device LDA are stored in the data memory unit DMU.

Here, in the present embodiment 2, the red, green and blue pixels arecontained in plural pixels. Therefore, first initial layout dataindicative of an initial arrangement position of a constituent elementcorresponding to the red pixel, second initial layout data indicative ofan initial arrangement position of a constituent element correspondingto a green pixel, and third initial layout data indicative of an initialarrangement position of a constituent element corresponding to the bluepixel are included in the initial layout data.

Specifically, the initial layout data is comprised of, for example, aplurality of first coordinate data indicative of respective positions ofa plurality of constituent elements in a first direction with theposition of center of a pixel array comprised of a plurality of pixelsas a reference, and a plurality of second coordinate data indicative ofrespective positions of a plurality of constituent elements in a seconddirection orthogonal to the first direction.

Further, in the embodiment 1, in the basic pattern BP2 of FIG. 9, forexample, the amount of misregistration of the constituent element CER2corresponding to the red pixel is smaller than the amount ofmisregistration of the constituent element CEG2 corresponding to thegreen pixel. In addition, the amount of misregistration of theconstituent element CEB2 corresponding to the blue pixel is larger thanthe amount of misregistration of the constituent element CEG2corresponding to the green pixel.

This means that the shrink rate data of the constituent elementcorresponding to the red pixel, the shrink rate data of the constituentelement corresponding to the green pixel, and the shrink rate data ofthe constituent element corresponding to the blue pixel are different invalue from each other. Thus, first shrink rate data indicative of ashrink rate of the constituent element corresponding to the red pixel,and second shrink rate data indicative of a shrink rate of theconstituent element corresponding to the green pixel and smaller thanthe first shrink rate data in value are included in the shrink rate datainputted in the present embodiment 2. Further, third shrink rate dataindicative of a shrink rate of the constituent element corresponding tothe blue pixel and smaller than the second shrink rate data in value areincluded in the shrink rate data inputted in the present embodiment 2.

Further, since the red, green and blue pixels included in a plurality ofpixels are arranged in an array form in a Bayer array, the pitch betweenthe red pixels, the pitch between the green pixels, and the pitchbetween the blue pixels are different from each other. From this, firstpitch data corresponding to the pitch between the red pixels, secondpitch data corresponding to the pitch between the green pixels, andthird pitch data corresponding to the pitch between the blue pixels areincluded in the pitch data inputted from the input unit IU.

Next, the shrink layout data operation unit SLDU is configured tocalculate shrink layout data indicative of a shrunken arrangementposition of an initial arrangement position from the initial layoutdata, based on the shrink rate data inputted from the input unit IU. Theshrink layout data operation unit SLDU is realized by operating the CPU1 by the program group 122 stored in the hard disk device 12 of FIG. 14,for example.

Here, in the present embodiment 2, the red, green and blue pixels areincluded in a plurality of pixels. Therefore, first shrink layout dataindicative of an arrangement position where an initial arrangementposition of a constituent element corresponding to the red pixel isshrunken, and second shrink layout data indicative of an arrangementposition where an initial arrangement position of a constituent elementcorresponding to the green pixel is shrunken, are included in the shrinklayout data. Further, third shrink layout data indicative of anarrangement position where an initial arrangement position of aconstituent element corresponding to the blue pixel is shrunken, isincluded in the shrink layout data.

Thus, the shrink layout data operation unit SLDU is configured tocalculate the first shrink layout data from the first initial layoutdata, based on the first shrink rate data and calculate the secondshrink layout data from the second initial layout data, based on thesecond shrink rate data. Further, the shrink layout data operation unitSLDU is configured to calculate the third shrink layout data from thethird initial layout data, based on the third shrink rate data. Theshrink layout data calculated by the shrink layout data operation unitSLDU in this way are stored in the data memory unit DMU shown in FIG.15.

Incidentally, the shrink layout data is also comprised of, for example,a plurality of first coordinate data, and a plurality of secondcoordinate data. In this case, the shrink layout data operation unitSLDU multiplies a plurality of first coordinate data of initial layoutdata by shrink rate data respectively, for example to thereby calculatea plurality of first coordinate data of shrink layout data respectively.Similarly, the shrink layout data operation unit SLDU multiplies aplurality of second coordinate data of initial layout data by shrinkrate data respectively, for example to thereby calculate a plurality ofsecond coordinate data of shrink layout data respectively.

Subsequently, the division operation unit DOU divides shrink layout databy the grid data indicative of the unit to digitize the shrink layoutdata calculated by the shrink layout data operation unit SLDU tocalculate divided data. This division operation unit DOU is realized byoperating the CPU 1 by the program group 122 stored in the hard diskdevice 12 of FIG. 14, for example.

Here, in the present embodiment 2, the red, green and blue pixels areincluded in a plurality of pixels. Therefore, the divided data includesfirst divided data corresponding to the first shrink layout data, seconddivided data corresponding to the second shrink layout data, and thirddivided data corresponding to the third shrink layout data.

Accordingly, the division operation unit DOU is configured to divide thefirst shrink layout data by the grid data to calculate the first divideddata, and divide the second shrink layout data by the grid data tocalculate the second divided data. Further, the division operation unitDOU is configured to divide the third shrink layout data by the griddata to calculate the third divided data. The divided data calculated bythe division operation unit DOU in this way are stored in the datamemory unit DMU shown in FIG. 15.

Next, when numeric data after a decimal point is included in the divideddata calculated by the division operation unit DOU, the integeroperation unit IOU is configured to perform integer processing on thedivided data to calculate integer data. Specifically, for example, theinteger operation unit IOU is configured to calculate integer data bythe process of discarding or rounding down the numeric data after thedecimal point included in the divided data. The integer operation unitIOU is realized by operating the CPU 1 by the program group 122 storedin the hard disk device 12 of FIG. 14, for example.

Here, in the present embodiment 2, the red, green and blue pixels areincluded in a plurality of pixels. Therefore, first integer datacorresponding to the first divided data, second integer datacorresponding to the second divided data, and third integer datacorresponding to the third divided data are included in the integerdata.

Accordingly, the integer operation unit IOU is configured to performinteger processing on the first divided data to calculate the firstinteger data, perform integer processing on the second divided data tocalculate the second integer data and perform integer processing on thethird divided data to calculate the third integer data. The integer datacalculated by the integer operation unit IOU in this manner are storedin the data memory unit DMU shown in FIG. 15.

Subsequently, the corrected layout data operation unit CLDU isconfigured to calculate corrected layout data indicative of thedigitized shrink layout data by multiplying the grid data and theinteger data. The corrected layout data operation unit CLDU is realizedby operating the CPU 1 by the program 122 stored in the hard disk device12 of FIG. 14, for example.

Here, in the present embodiment 2, the red, green and blue pixels areincluded in a plurality of pixels. Therefore, the corrected layout dataincludes first corrected layout data indicative of a correction positionof a constituent element corresponding to the red pixel, secondcorrected layout data indicative of a correction position of aconstituent element corresponding to the green pixel, and thirdcorrected layout data indicative of a correction position of aconstituent element corresponding to the blue pixel.

Accordingly, the corrected layout data operation unit CLDU is configuredto calculate the first corrected layout data by multiplying the griddata and the first integer data and calculate the second correctedlayout data by multiplying the grid data and the second integer data.Further, the corrected layout data operation unit CLDU is configured tocalculate the third corrected layout data by multiplying the grid dataand the third integer data. The corrected layout data calculated by thecorrected layout data operation unit CLDU in this way are stored in thedata memory unit DMU shown in FIG. 15.

At last, the output unit OU is configured to output the corrected layoutdata calculated by the corrected layout data operation unit CLDU.

Layout Data Generating Method

The layout data generating device LDA in the present embodiment 2 isconfigured in the above-described manner. A layout data generatingmethod using the layout data generating device LDA will hereinafter bedescribed with reference to the accompanying drawings.

In the Case of Odd-Numbered Array

A description will first be made about a layout data generating methodwhere the arrangement of constituent elements of an optical member is anodd-numbered array. FIG. 16 is a typical diagram showing a layoutarrangement example in which constituent elements of an optical memberare arranged in an odd-numbered array. In FIG. 16, each point indicatedby a broken line indicates an initial layout arrangement position ILP ofeach constituent element of the optical member. Each of points indicatedby dots indicates a correction layout arrangement position CLP of eachconstituent element of the optical member. In the layout data generatingmethod in the present embodiment 2, there is provided a method forperforming arithmetic processing on initial layout data indicative ofeach initial layout arrangement position ILP to thereby finally generatecorrected layout data indicative of each correction layout dataarrangement position CLP. The layout data generating method in thepresent embodiment 2 will hereinafter be described.

Here, FIG. 17 is a table showing an example representing various dataused in the layout data generating method in the present embodiment 2.In the layout data generating method described in the present embodiment2, the various data are represented as shown below:

Pitch data→(px, py)

Shrink rate data→s

Pixel number→(nx, ny)

-   -   —Nx≦nx≦Nx    -   —Ny≦nx≦Ny

Origin coordinate data→(x_0, y_0)

Initial layout data→(x_nx, y_ny)

Shrink layout data→(x1_nx, y1_ny)

Grid data→mg

Divided data→(xd_nx, yd_ny)

Integer data→(1x_nx, 1y_ny)

Corrected layout data→(x2_nx, y2_ny)

FIG. 18 is a flowchart for describing the layout data generating methodin the present embodiment 2. The layout data generating method in thepresent embodiment 2 will be described below based on FIG. 18.

First, the layout data generating device LDA is inputted with theinitial layout data, shrink rate data, pitch data, origin coordinatedata, grid data, etc. by the input unit IU shown in FIG. 15 (S101 ofFIG. 18). These data are stored in the data memory unit DMU shown inFIG. 15, for example.

Next, the shrink layout data operation unit SLDU shown in FIG. 15calculates shrink layout data indicative of an arrangement positionwhere an initial arrangement position is shrunken, from the initiallayout data, based on the shrink rate data, pitch data, origincoordinate data, etc. inputted from the input unit IU. Specifically, theshrink layout data operation unit SLDU performs arithmetic processingshown in equations (1) and (2) by the CPU 1 shown in FIG. 14 (S102 ofFIG. 18). Then, the shrink layout data calculated by the shrink layoutdata operation unit SLDU is stored in the data memory unit DMU shown inFIG. 15, for example.x1_nx=x_0+nx·(s·px)   (1)y1_ny=y_0+ny·(s·py)   (2)

Subsequently, the division operation unit DOU shown in FIG. 15 dividesthe shrink layout data by grid data indicative of a unit to digitize theshrink layout data calculated by the shrink layout data operation unitSLDU to calculate divided data. Specifically, the division operationunit DOU performs arithmetic processing shown in equations (3) and (4)by the CPU 1 shown in FIG. 14 (S103 of FIG. 18). The divided datacalculated by the division operation unit DOU is stored in the datamemory unit DMU shown in FIG. 15, for example.xd_nx=x1_nx+mg   (3)yd_ny=y1_ny+mg   (4)

Thereafter, when numeric data after a decimal point is included in thedivided data calculated by the division operation unit DOU, the integeroperation unit IOU shown in FIG. 15 performs integer processing on thedivided data to calculate integer data. For example, the integeroperation unit IOU calculates integer data by the process of roundingdown the numeric data after the decimal point included in the divideddata. Specifically, the integer operation unit IOU performs arithmeticprocessing shown in equations (5) and (6) by the CPU 1 shown in FIG. 14(S104 of FIG. 18). Then, the integer data calculated by the integeroperation unit IOU is stored in the data memory unit DMU shown in FIG.15, for example. Incidentally, when the numeric data after the decimalpoint is not included in the divided data calculated by the divisionoperation unit DOU, the divided data is taken as integer data as it is.1x_nx=ROUNDDOWN(xd_nx)   (5)1y_ny=ROUNDDOWN(yd_ny)   (6)

Next, the corrected layout data operation unit CLDU shown in FIG. 15multiplies the grid data and the integer data to thereby calculatecorrected layout data indicative of digitized shrink layout data.Specifically, the corrected layout data operation unit CLDU performsarithmetic processing shown in equations (7) and (8) by the CPU 1 shownin FIG. 14 (S105 of FIG. 18). Then, the corrected layout data calculatedby the corrected layout operation unit CLDU is stored in the datastorage unit DMU shown in FIG. 15, for example.x2_nx=1x_nx·mg   (7)y2_ny=1y_ny·mg   (8)

Thereafter, the output unit OU shown in FIG. 15 outputs the correctedlayout data calculated by the corrected layout data operation unit CLDU(S106 of FIG. 18). In the layout arrangement in which the constituentelements of each optical member are arranged in the odd-numbered array,the corrected layout data of each constituent element can be generatedin the above-described manner.

Incidentally, since the constituent element corresponding to the redpixel, the constituent element corresponding to the green pixel, and theconstituent element corresponding to the blue pixel exist actually,corrected layout data are generated with respect to the respectiveconstituent elements by using the shrink rate data considering thechromatic aberration. That is, in the present embodiment 2, thecorrected layout data are generated separately with respect to theconstituent element corresponding to the red pixel, the constituentelement corresponding to the green pixel and the constituent elementcorresponding to the blue pixel.

Specifically, in the constituent element corresponding to the red pixel,first shrink layout data is calculated from first initial layout data onthe basis of first shrink rate data. First corrected layout data isgenerated based on the calculated first shrink layout data. Also in theconstituent element corresponding to the green pixel, second shrinklayout data is calculated from second initial layout data on the basisof second shrink rate data. Second corrected layout data is generatedbased on the calculated second shrink layout data. Further, in theconstituent element corresponding to the blue pixel, third shrink layoutdata is calculated from third initial layout data on the basis of thirdshrink rate data. Third corrected layout data is generated based on thecalculated third shrink layout data.

In the Case of Even-Numbered Array

A description will next be made about a layout data generating methodwhere the arrangement of constituent elements of an optical member is aneven-numbered array. FIG. 19 is a typical diagram showing a layoutarrangement example in which constituent elements of an optical memberare arranged in an odd-numbered array. In FIG. 19, each point indicatedby a broken line indicates an initial layout arrangement position ILP ofeach constituent element of the optical member. Each of points indicatedby dots indicates a correction layout arrangement position CLP of eachconstituent element of the optical member. In the layout data generatingmethod in the present embodiment 2, there is provided a method forperforming arithmetic processing on initial layout data indicative ofeach initial layout arrangement position ILP to thereby finally generatecorrected layout data indicative of each correction layout dataarrangement position CLP. The layout data generating method in thepresent embodiment 2 will hereinafter be described.

Here, in the layout data generating method described in the presentembodiment 2, various data are represented as shown below:

Pitch data→(px, py)

Shrink rate data→s

Pixel number→(nx, ny)

-   -   —Nx+1≦nx≦Nx    -   —Ny+1≦nx≦Ny

Origin coordinate data→(x_0, y_0)

Initial layout data→(x_nx, y_ny)

Shrink layout data→(x1_nx, y1_ny)

Grid data→mg

Divided data→(xd_nx, yd_ny)

Integer data→(1x_nx, 1y_ny)

Corrected layout data→(x2_nx, y2_ny)

FIG. 20 is a flowchart for describing the layout data generating methodin the present embodiment 2. The layout data generating method in thepresent embodiment 2 will be described below based on FIG. 20.

First, the layout data generating device LDA is inputted with theinitial layout data, shrink rate data, pitch data, origin coordinatedata, grid data, etc. by the input unit IU shown in FIG. 15 (S201 ofFIG. 20). These data are stored in the data memory unit DMU shown inFIG. 15, for example.

Next, the shrink layout data operation unit SLDU shown in FIG. 15calculates shrink layout data indicative of an arrangement positionwhere an initial arrangement position is shrunken, from the initiallayout data, based on the shrink rate data, pitch data, origincoordinate data, etc. inputted from the input unit IU. Specifically, theshrink layout data operation unit SLDU performs arithmetic processingshown in equations (9) and (10) by the CPU 1 shown in FIG. 14 (S202 ofFIG. 20). Then, the shrink layout data calculated by the shrink layoutdata operation unit SLDU is stored in the data memory unit DMU shown inFIG. 15, for example.x1_nx=x_0+(nx−0.5)·(s·px)   (9)y1_ny=y_0+(ny−0.5)·(s·py)   (10)

Subsequently, the division operation unit DOU shown in FIG. 15 dividesthe shrink layout data by grid data indicative of a unit to digitize theshrink layout data calculated by the shrink layout data operation unitSLDU to calculate divided data. Specifically, the division operationunit DOU performs arithmetic processing shown in equations (11) and (12)by the CPU 1 shown in FIG. 14 (S203 of FIG. 20). The divided datacalculated by the division operation unit DOU is stored in the datamemory unit DMU shown in FIG. 15, for example.xd_nx=x1_nx+mg   (11)yd_ny=y1_ny+mg   (12)

Thereafter, when numeric data after a decimal point is included in thedivided data calculated by the division operation unit DOU, the integeroperation unit IOU shown in FIG. 15 performs integer processing on thedivided data to calculate integer data. For example, the integeroperation unit IOU calculates integer data by the process of roundingdown the numeric data after the decimal point included in the divideddata. Specifically, the integer operation unit IOU performs arithmeticprocessing shown in equations (13) and (14) by the CPU 1 shown in FIG.14 (S204 of FIG. 20). Then, the integer data calculated by the integeroperation unit IOU is stored in the data memory unit DMU shown in FIG.15, for example. Incidentally, when the numeric data after the decimalpoint is not included in the divided data calculated by the divisionoperation unit DOU, the divided data is taken as integer data as it is.1x_nx=ROUNDDOWN(xd_nx)   (13)1y_ny=ROUNDDOWN(yd_ny)   (14)

Next, the corrected layout data operation unit CLDU shown in FIG. 15multiplies the grid data and the integer data to thereby calculatecorrected layout data indicative of digitized shrink layout data.Specifically, the corrected layout data operation unit CLDU performsarithmetic processing shown in equations (15) and (16) by the CPU 1shown in FIG. 14 (S205 of FIG. 20). Then, the corrected layout datacalculated by the corrected layout operation unit CLDU is stored in thedata storage unit DMU shown in FIG. 15, for example.x2_nx=1x_nx·mg   (15)y2_ny=1y_ny·mg   (16)

Thereafter, the output unit OU shown in FIG. 15 outputs the correctedlayout data calculated by the corrected layout data operation unit CLDU(S206 of FIG. 20). In the layout arrangement in which the constituentelements of each optical member are arranged in the even-numbered array,the corrected layout data of each constituent element can be generatedin the above-described manner.

Incidentally, since the constituent element corresponding to the redpixel, the constituent element corresponding to the green pixel, and theconstituent element corresponding to the blue pixel exist actually,corrected layout data are generated with respect to the respectiveconstituent elements by using the shrink rate data considering thechromatic aberration. That is, in the present embodiment 2, thecorrected layout data are generated separately with respect to theconstituent element corresponding to the red pixel, the constituentelement corresponding to the green pixel and the constituent elementcorresponding to the blue pixel.

Specifically, in the constituent element corresponding to the red pixel,first shrink layout data is calculated from first initial layout data onthe basis of first shrink rate data. First corrected layout data isgenerated based on the calculated first shrink layout data. Also in theconstituent element corresponding to the green pixel, second shrinklayout data is calculated from second initial layout data on the basisof second shrink rate data. Second corrected layout data is generatedbased on the calculated second shrink layout data. Further, in theconstituent element corresponding to the blue pixel, third shrink layoutdata is calculated from third initial layout data on the basis of thirdshrink rate data. Third corrected layout data is generated based on thecalculated third shrink layout data.

Advantageous Effects in Embodiment 2

(1) According to the layout data generating device in the presentembodiment 2, the layout arrangement of the constituent elementsdescribed in the embodiment 1 can be realized.

(2) In particular, according to the present embodiment 2, the devicemaker is capable of generating the corrected layout data to which theadjustment corresponding to each misregistration constituent element hasbeen reflected, without manufacturing the mask by the mask maker byperforming the adjustment corresponding to each misregistrationconstituent element from the initial layout data. As a result, it ispossible to provide the corrected layout data generated by the devicemaker to the mask maker. It is therefore possible to prevent drawingmisalignment due to a plurality of times of electron beam drawingbecause the mask can be manufactured by one electron beam drawing, basedon the corrected layout data. It is thus possible to manufacture ahighly accurate mask high in reliability by using the layout datagenerating device in the present embodiment 2. Consequently, an imagesensor of high performance and high reliability can be provided.

(3) Further, according to the present embodiment 2, the instruction fromthe device maker to the mask maker is also simplified, and themanufacturing process of the mask in the mask maker is also simplified,thus making it possible to reduce the manufacturing cost of the mask. Asa result, the use of the layout data generating device in the presentembodiment 2 enables a reduction in the manufacturing cost of the imagesensor manufactured by the device maker.

Layout Data Generating Program

The layout data generating method executed in the above-described layoutdata generating device LDA can be realized by a layout data generatingprogram that causes a computer to execute layout data generatingprocessing. For example, in the layout data generating device LDAcomprised of the computer shown in FIG. 14, the layout data generatingprogram in the present embodiment 2 is introduced as one program group122 stored in the hard disk device 12, and the computer that serves asthe layout data generating device LDA is caused to execute the layoutdata generating program, whereby the layout data generating method inthe present embodiment 2 is realized.

The layout data generating program for causing the computer to executeeach processing for generating layout data can be recorded anddistributed in recoding media readable by the computer. Such recordingmedia include, for example, a magnetic recording medium such as a harddisk, a flexible disk or the like, an optical recording medium such as aCD-ROM, a DVD-ROM or the like, a hardware device typified by anon-volatile memory such as a ROM, an EEPROM or the like, etc.

Modification 1

In the embodiment 2, the integer operation unit IOU has been configuredto calculate the integer data by the process of rounding down thenumeric data after the decimal point included in the divided data. Thearithmetic processing for calculating the integer data is not howeverlimited to it. As shown in FIG. 21, for example, the integer operationunit IOU may be configured to calculate integer data by the process ofrounding up numeric data after a decimal point included in divided data(S304 of FIG. 21). That is, the integer operation unit IOU can also beconfigured to execute arithmetic processing shown in equations (17) and(18) by the CPU 1 shown in FIG. 14.1x_nx=ROUNDUP(xd_nx)   (17)1y_ny=ROUNDUP(yd_ny)   (18)

Modification 2

In the embodiment 2, the integer operation unit IOU has been configuredto calculate the integer data by the process of rounding down thenumeric data after the decimal point included in the divided data. Thearithmetic processing for generating the integer data is not howeverlimited to it. As shown in FIG. 22, for example, the integer operationunit IOU may be configured to calculate integer data by the process ofrounding off numeric data after a decimal point included in divided data(S404 of FIG. 22). That is, the integer operation unit IOU can also beconfigured to execute arithmetic processing shown in equations (19) and(20) by the CPU 1 shown in FIG. 14.1x_nx=ROUNDOFF(xd_nx)   (19)1y_ny=ROUNDOFF(yd_ny)   (20)

Modification 3

In the present modification 3, a description will be made about anexample using the layout data generating device LDA in the embodiment 2,for example where a light shielding zone is taken as an optical memberby way of example, and light shielding pattern data for a mask forforming the light shielding zone is generated.

As shown in FIG. 15, the layout data generating device LDA further has ashielding pattern data generating unit SPU that generates lightshielding pattern data indicative of a pattern of a light shieldingzone. The shielding pattern data generating unit SPU is configured togenerate light shielding pattern data by performing arithmeticprocessing based on the corrected layout data calculated by thecorrected layout data operation unit CLDU on solid pattern data taken asthe base of each light shielding pattern.

Specifically, the shielding pattern data generating unit SPU prepares inadvance solid pattern data for such a solid pattern AOP as shown in FIG.23. Further, the corrected layout data operation unit CLDU of theabove-described layout data generating device LDA performs arithmeticprocessing on initial layout data indicative of each initial layoutarrangement position ILP shown in FIG. 24 to thereby finally generatecorrected layout data indicative of a correction layout arrangementposition CLP.

Then, the shielding pattern data generating unit SPU performs arithmeticprocessing based on the corrected layout data calculated by thecorrected layout data operation unit CLDU on solid pattern data taken asthe base of each light shielding pattern. For example, the shieldingpattern data generating unit SPU performs processing (NOT processing)for subtracting position data of a light penetration unit indicated bythe corrected layout data from the solid pattern data. As shown in FIG.25, for example, it is possible to generate light shielding pattern dataof a mask corresponding to a mesh-like light shielding zone SZ providedwith each light penetration unit LPR at a place indicated by thecorrected layout data.

While the invention made above by the present inventors has beendescribed specifically on the basis of the embodiments, the presentinvention is not limited to the embodiments referred to above. It isneedless to say that various changes can be made thereto within thescope not departing from the gist thereof.

The above embodiments include the following modes.

(Appendix 1)

A layout data generating program for causing a computer to execute thegeneration of layout data indicative of arrangement positions of aplurality of constituent elements configuring an optical member of asolid-state imaging device including:

a plurality of pixels respectively having photoelectric conversion unitseach converting incident light into an electric charge and arranged in amatrix form in units of basic patterns, and

the optical member arranged on the incidence side of the incident lightthan the pixels and having the constituent elements respectivelycorresponding to the pixels,

in which the pixels include:

a first wavelength range light pixel that makes first wavelength rangelight included in the incident light incident,

a second wavelength range light pixel that makes incident secondwavelength range light included in the incident light and shorter inwavelength than the first wavelength range light, and

a third wavelength range light pixel that makes incident thirdwavelength range light included in the incident light and shorter inwavelength than the second wavelength range light,

in which each of the basic patterns is comprised of an arrangementpattern formed by combining the first wavelength range light pixel, thesecond wavelength range light pixel and the third wavelength range lightpixel,

in which the layout data generating program includes:

(a) a process for inputting initial layout data indicative of respectiveinitial arrangement positions of the constituent elements arranged inthe same positions as the photoelectric conversion units planarly, andshrink rate data indicative of rates at which the respective arrangementpositions of the constituent elements are shrunken,

(b) a process for calculating shrink layout data indicative ofarrangement positions where the initial arrangement positions areshrunken, from the initial layout data, based on the shrink rate datainputted in the (a) process,

(c) a process for dividing the shrink layout data by grid dataindicative of a unit to digitize the shrink layout data to calculatedivided data,

(d) a process for performing integer processing on the divided data whennumeric data after a decimal point is included in the divided data, tocalculate integer data,

(e) a process for multiplying the grid data and the integer data tothereby calculate corrected layout data indicative of the digitizedshrink layout data, and

(f) a process for outputting the corrected layout data,

in which the initial layout data includes:

first initial layout data indicative of the initial arrangement positionof the constituent element corresponding to the first wavelength rangelight pixel,

second initial layout data indicative of the initial arrangementposition of the constituent element corresponding to the secondwavelength range light pixel, and

third initial layout data indicative of the initial arrangement positionof the constituent element corresponding to the third wavelength rangelight pixel,

in which the shrink rate data includes:

first shrink rate data indicative of a shrink rate of the constituentelement corresponding to the first wavelength range light pixel,

second shrink rate data indicative of a shrink rate of the constituentelement corresponding to the second wavelength range light pixel andsmaller in value than the first shrink rate data, and

third shrink rate data indicative of a shrink rate of the constituentelement corresponding to the third wavelength range light pixel andsmaller in value than the second shrink rate data,

in which the shrink layout data includes:

first shrink layout data indicative of an arrangement position where theinitial arrangement position of the constituent element corresponding tothe first wavelength range light pixel is shrunken,

second shrink layout data indicative of an arrangement position wherethe initial arrangement position of the constituent elementcorresponding to the second wavelength range light pixel is shrunken,and

third shrink layout data indicative of an arrangement position where theinitial arrangement position of the constituent element corresponding tothe third wavelength range light pixel is shrunken,

in which the divided data includes:

first divided data corresponding to the first shrink layout data,

second divided data corresponding to the second shrink layout data, and

third divided data corresponding to the third shrink layout data,

in which the integer data includes:

first integer data corresponding to the first divided data,

second integer data corresponding to the second divided data, and

third integer data corresponding to the third divided data,

in which the corrected layout data includes:

first corrected layout data indicative of a correction position of theconstituent element corresponding to the first wavelength range lightpixel,

second corrected layout data indicative of a correction position of theconstituent element corresponding to the second wavelength range lightpixel, and

third corrected layout data indicative of a correction position of theconstituent element corresponding to the third wavelength range lightpixel,

in which the (b) process calculates the first shrink layout data fromthe first initial layout data, based on the first shrink rate data,

calculates the second shrink layout data from the second initial layoutdata, based on the second shrink rate data, and

calculates the third shrink layout data from the third initial layoutdata, based on the third shrink rate data,

in which the (c) process divides the first shrink layout data by thegrid data to calculate the first divided data,

divides the second shrink layout data by the grid data to calculate thesecond divided data, and

divides the third shrink layout data by the grid data to calculate thethird divided data,

in which the (d) process performs integer processing on the firstdivided data to calculate the first integer data,

performs integer processing on the second divided data to calculate thesecond integer data, and

performs integer processing on the third divided data to calculate thethird integer data, and

in which the (e) process multiplies the grid data and the first integerdata to thereby calculate the first corrected layout data,

multiplies the grid data and the second integer data to therebycalculate the second corrected layout data, and

multiplies the grid data and the third integer data to thereby calculatethe third corrected layout data.

(Appendix 2)

A computer-readable recording medium that records the layout datagenerating program described in Appendix 1.

What is claimed is:
 1. A solid-state imaging device, comprising: (a) aplurality of pixels respectively having photoelectric conversion unitseach converting incident light into an electric charge and arranged in amatrix form in units of basic patterns; and (b) an optical memberarranged on the incidence side of the incident light than the pixels andhaving constituent elements respectively corresponding to the pixels;wherein the pixels include: (a1) a first wavelength range light pixelthat makes first wavelength range light included in the incident lightincident; (a2) a second wavelength range light pixel that makes incidentsecond wavelength rage light included in the incident light and shorterin wavelength than the first wavelength range light; and (a3) a thirdwavelength range light pixel that makes incident third wavelength rangelight included in the incident light and shorter in wavelength than thesecond wavelength range light, wherein each of the basic patterns iscomprised of an arrangement pattern formed by combining the firstwavelength range light pixel, the second wavelength range light pixeland the third wavelength range light pixel, wherein a plurality ofmisregistration constituent elements in each of which misregistrationoccurs with respect to each of the photoelectric conversion units existin the constituent elements configuring the optical member, wherein inthe misregistration constituent elements, the misregistration increasestoward the misregistration constituent elements separated from a centerposition of a pixel array comprised of the pixels, wherein in anarbitrary the basic pattern comprised of pixels corresponding to themisregistration constituent elements, the misregistration of themisregistration constituent element corresponding to the firstwavelength range light pixel is smaller than the misregistration of themisregistration constituent element corresponding to the secondwavelength range light pixel, and wherein in the arbitrary the basicpattern, the misregistration of the misregistration constituent elementcorresponding to the third wavelength range light pixel is larger thanthe misregistration of the misregistration constituent elementcorresponding to the second wavelength range light pixel.
 2. Thesolid-state imaging device according to claim 1, wherein the opticalmember is a light shielding zone, and wherein each of the constituentelements is a light penetration unit comprised of an opening provided inthe light shielding zone.
 3. The solid-state imaging device according toclaim 1, wherein the optical member is a color filter, wherein of theconstituent elements, the constituent element corresponding to the firstwavelength range light pixel is a first wavelength range lightpenetration filter that allows the first wavelength range light topenetrate therethrough, wherein of the constituent elements, theconstituent element corresponding to the second wavelength range lightpixel is a second wavelength range light penetration filter that allowsthe second wavelength range light to penetrate therethrough, and whereinof the constituent elements, the constituent element corresponding tothe third wavelength range light pixel is a third wavelength range lightpenetration filter that allows the third wavelength range light topenetrate therethrough.
 4. The solid-state imaging device according toclaim 1, wherein the optical member is a microlens group, and whereineach of the constituent elements is a microlens.
 5. The solid-stateimaging device according to claim 1, wherein the first wavelength rangelight is red light, wherein the second wavelength range light is greenlight, wherein the third wavelength range light is blue light, whereinthe first wavelength range light pixel is a red light pixel, wherein thesecond wavelength range light pixel is a green light pixel, and whereinthe third wavelength range light pixel is a blue light pixel.
 6. Thesolid-state imaging device according to claim 1, wherein each of thephotoelectric conversion units is comprised of a photodiode.
 7. A layoutdata generating device for generating layout data indicative ofarrangement positions of a plurality of constituent elements configuringan optical member of a solid-state imaging device, comprising: aplurality of pixels respectively having photoelectric conversion unitseach converting incident light into an electric charge and arranged in amatrix form in units of basic patterns; and the optical member arrangedon the incidence side of the incident light than the pixels and havingthe constituent elements respectively corresponding to the pixels,wherein the pixels include: a first wavelength range light pixel thatmakes first wavelength range light included in the incident lightincident; a second wavelength range light pixel that makes incidentsecond wavelength range light included in the incident light and shorterin wavelength than the first wavelength range light; and a thirdwavelength range light pixel that makes incident third wavelength rangelight included in the incident light and shorter in wavelength than thesecond wavelength range light, wherein each of the basic patterns iscomprised of an arrangement pattern formed by combining the firstwavelength range light pixel, the second wavelength range light pixeland the third wavelength range light pixel, wherein the layout datagenerating device includes: (a) an input unit that inputs thereininitial layout data indicative of respective initial arrangementpositions of the constituent elements arranged in the same positions asthe photoelectric conversion units planarly, and shrink rate dataindicative of rates at which the respective arrangement positions of theconstituent elements are shrunken; (b) a shrink layout data operationunit that calculates shrink layout data indicative of arrangementpositions where the initial arrangement positions are shrunken, from theinitial layout data, based on the shrink rate data inputted to the inputunit; (c) a division operation unit that divides the shrink layout databy grid data indicative of a unit to digitize the shrink layout data tocalculate divided data; (d) an integer operation unit that performsinteger processing on the divided data when numeric data after a decimalpoint is included in the divided data, to calculate integer data; (e) acorrected layout data operation unit that multiplies the grid data andthe integer data to thereby calculate corrected layout data indicativeof the digitized shrink layout data; and (f) an output unit that outputsthe corrected layout data, wherein the initial layout data includes:first initial layout data indicative of the initial arrangement positionof the constituent element corresponding to the first wavelength rangelight pixel; second initial layout data indicative of the initialarrangement position of the constituent element corresponding to thesecond wavelength range light pixel; and third initial layout dataindicative of the initial arrangement position of the constituentelement corresponding to the third wavelength range light pixel, whereinthe shrink rate data includes: first shrink rate data indicative of ashrink rate of the constituent element corresponding to the firstwavelength range light pixel; second shrink rate data indicative of ashrink rate of the constituent element corresponding to the secondwavelength range light pixel and smaller in value than the first shrinkrate data; and third shrink rate data indicative of a shrink rate of theconstituent element corresponding to the third wavelength range lightpixel and smaller in value than the second shrink rate data, wherein theshrink layout data includes: first shrink layout data indicative of anarrangement position where the initial arrangement position of theconstituent element corresponding to the first wavelength range lightpixel is shrunken; second shrink layout data indicative of anarrangement position where the initial arrangement position of theconstituent element corresponding to the second wavelength range lightpixel is shrunken; and third shrink layout data indicative of anarrangement position where the initial arrangement position of theconstituent element corresponding to the third wavelength range lightpixel is shrunken, wherein the divided data includes: first divided datacorresponding to the first shrink layout data; second divided datacorresponding to the second shrink layout data; and third divided datacorresponding to the third shrink layout data, wherein the integer dataincludes: first integer data corresponding to the first divided data;second integer data corresponding to the second divided data; and thirdinteger data corresponding to the third divided data, wherein thecorrected layout data includes: first corrected layout data indicativeof a correction position of the constituent element corresponding to thefirst wavelength range light pixel; second corrected layout dataindicative of a correction position of the constituent elementcorresponding to the second wavelength range light pixel; and thirdcorrected layout data indicative of a correction position of theconstituent element corresponding to the third wavelength range lightpixel, wherein the shrink layout data operation unit calculates thefirst shrink layout data from the first initial layout data, based onthe first shrink rate data, calculates the second shrink layout datafrom the second initial layout data, based on the second shrink ratedata, and calculates the third shrink layout data from the third initiallayout data, based on the third shrink rate data, wherein the divisionoperation unit divides the first shrink layout data by the grid data tocalculate the first divided data, divides the second shrink layout databy the grid data to calculate the second divided data, and divides thethird shrink layout data by the grid data to calculate the third divideddata, wherein the integer operation unit performs integer processing onthe first divided data to calculate the first integer data, performsinteger processing on the second divided data to calculate the secondinteger data, and performs integer processing on the third divided datato calculate the third integer data, and wherein the corrected layoutdata operation unit multiplies the grid data and the first integer datato thereby calculate the first corrected layout data, multiplies thegrid data and the second integer data to thereby calculate the secondcorrected layout data, and multiplies the grid data and the thirdinteger data to thereby calculate the third corrected layout data. 8.The layout data generating device according to claim 7, wherein theinitial layout data is comprised of a plurality of first coordinate dataindicative of respective positions of the constituent elements in afirst direction with a center position of a pixel array comprised of thepixels as a reference, and a plurality of second coordinate dataindicative of respective positions of the constituent elements in asecond direction orthogonal to the first direction, and wherein theshrink layout data and the corrected layout data are also comprised of aplurality of first coordinate data and a plurality of second coordinatedata.
 9. The layout data generating device according to claim 8, whereinthe shrink layout data operation unit multiplies the first coordinatedata of the initial layout data by the shrink rate data to therebycalculate the first coordinate data of the shrink layout data,respectively, and wherein the shrink layout data operation unitmultiplies the second coordinate data of the initial layout data by theshrink rate data to thereby calculate the second coordinate data of theshrink layout data, respectively.
 10. The layout data generating deviceaccording to claim 7, wherein the integer operation unit calculates theinteger data by the process of rounding down the numeric data after thedecimal point included in the divided data.
 11. The layout datagenerating device according to claim 7, wherein the integer operatingunit calculates the integer data by the process of rounding up thenumeric data after the decimal point included in the divided data. 12.The layout data generating device according to claim 7, wherein theinteger operation unit calculates the integer data by the process ofrounding off the numeric data after the decimal point included in thedivided data.
 13. The layout data generating device according to claim7, wherein the optical member is a light shielding zone, and whereineach of the constituent elements is a light penetration unit comprisedof an opening provided in the light shielding zone.
 14. The layout datagenerating device according to claim 13, further including a shieldingpattern data generating unit that generates light shielding pattern dataindicative of a pattern of the light shielding zone, wherein theshielding pattern data generating unit performs arithmetic processingbased on the corrected layout data calculated by the corrected layoutdata operation unit on solid pattern data taken as the base of eachlight shielding pattern to thereby generate the light shielding patterndata.
 15. The layout data generating device according to claim 7,wherein the optical member is a color filter, wherein of the constituentelements, the constituent element corresponding to the first wavelengthrange light pixel is a first wavelength range light penetration filterthat allows first wavelength range light to penetrate therethrough,wherein of the constituent elements, the constituent elementcorresponding to the second wavelength range light pixel is a secondwavelength range light penetration filter that allows second wavelengthrange light to penetrate therethrough, and wherein of the constituentelements, the constituent element corresponding to the third wavelengthrange light pixel is a third wavelength range light penetration filterthat allows third wavelength range light to penetrate therethrough. 16.The layout data generating device according to claim 7, wherein theoptical member is a microlens group, and wherein each of the constituentelements is a microlens.
 17. The layout data generating device accordingto claim 7, wherein the first wavelength range light is red light,wherein the second wavelength range light is green light, wherein thethird wavelength range light is blue light, wherein the first wavelengthrange light pixel is a red light pixel, wherein the second wavelengthrange light pixel is a green light pixel, and wherein the thirdwavelength range light pixel is a blue light pixel.
 18. A layout datagenerating method for generating by a computer, layout data indicativeof arrangement positions of a plurality of constituent elementsconfiguring an optical member of a solid-state imaging device including:a plurality of pixels respectively having photoelectric conversion unitseach converting incident light into an electric charge and arranged in amatrix form in units of basic patterns; and the optical member arrangedon the incidence side of the incident light than the pixels and havingthe constituent elements respectively corresponding to the pixels,wherein the pixels include: a first wavelength range light pixel thatmakes first wavelength range light included in the incident lightincident; a second wavelength range light pixel that makes incidentsecond wavelength range light included in the incident light and shorterin wavelength than the first wavelength range light; and a thirdwavelength range light pixel that makes incident third wavelength rangelight included in the incident light and shorter in wavelength than thesecond wavelength range light, wherein each of the basic patterns iscomprised of an arrangement pattern formed by combining the firstwavelength range light pixel, the second wavelength range light pixeland the third wavelength range light pixel, the layout data generatingmethod comprising the steps of: (a) inputting to an input unit of thecomputer, initial layout data indicative of respective initialarrangement positions of the constituent elements arranged in the samepositions as the photoelectric conversion units planarly, and shrinkrate data indicative of rates at which the respective arrangementpositions of the constituent elements are shrunken; (b) calculating by ashrink layout data operation unit of the computer, shrink layout dataindicative of arrangement positions where the initial arrangementpositions are shrunken, from the initial layout data, based on theshrink rate data inputted to the input unit; (c) dividing the shrinklayout data by grid data indicative of a unit to digitize the shrinklayout data to calculate divided data by a division operation unit ofthe computer; (d) when numeric data after a decimal point is included inthe divided data, performing integer processing on the divided data tocalculate integer data by an integer operation unit of the computer; (e)multiplying the grid data and the integer data to thereby calculatecorrected layout data indicative of the digitized shrink layout data bya corrected layout data operation unit of the computer; and (f)outputting the corrected layout data by an output unit of the computer,wherein the initial layout data includes: first initial layout dataindicative of the initial arrangement position of the constituentelement corresponding to the first wavelength range light pixel; secondinitial layout data indicative of the initial arrangement position ofthe constituent element corresponding to the second wavelength rangelight pixel; and third initial layout data indicative of the initialarrangement position of the constituent element corresponding to thethird wavelength range light pixel, wherein the shrink rate dataincludes: first shrink rate data indicative of a shrink rate of theconstituent element corresponding to the first wavelength range lightpixel; second shrink rate data indicative of a shrink rate of theconstituent element corresponding to the second wavelength range lightpixel and smaller in value than the first shrink rate data; and thirdshrink rate data indicative of a shrink rate of the constituent elementcorresponding to the third wavelength range light pixel and smaller invalue than the second shrink rate data, wherein the shrink layout dataincludes: first shrink layout data indicative of an arrangement positionwhere the initial arrangement position of the constituent elementcorresponding to the first wavelength range light pixel is shrunken;second shrink layout data indicative of an arrangement position wherethe initial arrangement position of the constituent elementcorresponding to the second wavelength range light pixel is shrunken;and third shrink layout data indicative of an arrangement position wherethe initial arrangement position of the constituent elementcorresponding to the third wavelength range light pixel is shrunken,wherein the divided data includes: first divided data corresponding tothe first shrink layout data; second divided data corresponding to thesecond shrink layout data; and third divided data corresponding to thethird shrink layout data, wherein the integer data includes: firstinteger data corresponding to the first divided data; second integerdata corresponding to the second divided data, and third integer datacorresponding to the third divided data, wherein the corrected layoutdata includes: first corrected layout data indicative of a correctionposition of the constituent element corresponding to the firstwavelength range light pixel; second corrected layout data indicative ofa correction position of the constituent element corresponding to thesecond wavelength range light pixel; and third corrected layout dataindicative of a correction position of the constituent elementcorresponding to the third wavelength range light pixel, wherein the (b)step calculates the first shrink layout data from the first initiallayout data, based on the first shrink rate data, calculates the secondshrink layout data from the second initial layout data, based on thesecond shrink rate data, and calculates the third shrink layout datafrom the third initial layout data, based on the third shrink rate data,wherein the (c) step divides the first shrink layout data by the griddata to calculate the first divided data, divides the second shrinklayout data by the grid data to calculate the second divided data, anddivides the third shrink layout data by the grid data to calculate thethird divided data, wherein the (d) step performs integer processing onthe first divided data to calculate the first integer data, performsinteger processing on the second divided data to calculate the secondinteger data, and performs integer processing on the third divided datato calculate the third integer data, and wherein the (e) step multipliesthe grid data and the first integer data to thereby calculate the firstcorrected layout data, multiplies the grid data and the second integerdata to thereby calculate the second corrected layout data, andmultiplies the grid data and the third integer data to thereby calculatethe third corrected layout data.